2N5779 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5779 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 0.25 A
Temperatura operativa máxima (Tj): 100 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 7.6 pF
Ganancia de corriente contínua (hFE): 2000
Encapsulados: TO92
Búsqueda de reemplazo de 2N5779
- Selecciónⓘ de transistores por parámetros
2N5779 datasheet
2n5771 mmbt5771.pdf
2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage
2n5771.pdf
2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage
2n5772.pdf
2N5772 NPN Switching Transistor Sourced from process 22. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continued 300 mA TSTG Operating and Storage Junction Temperature Range -
Otros transistores... 2N5667N1, 2N5667S, 2N5681SMD05, 2N5682X, 2N5684G, 2N5686G, 2N5777, 2N5778, A1013, 2N5780, 2N5781XL, 2N5782L, 2N5784SMD, 2N5784SMD05, 2N5785N1, 2N5785SMD, 2N5785SMD05
History: 2SD1803T | P30
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
a1023 | d313 transistor | 2sa1302 | 2sd315 | a1013 | 2sb554 | 2sd2560 | 2sc2078 transistor












