2SCR544PFRA Todos los transistores

 ..1. Size:1513K  rohm
 2scr544pfra.pdf

2SCR544P 2SCR544PFRA Data Sheet NPN 2.5A 80V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 80V Base Collector IC 2.5A Emitter 2SCR544PFRA 2SCR544P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR544P 2SAR544PFRA 3) Low VCE(sat) VCE(sat)=0.4V Max. (IC/IB=1A/50mA) 4) Lead Free/RoHS Compliant

 6.1. Size:238K  rohm
 2scr544p.pdf

Midium Power Transistors (80V / 2.5A) 2SCR544P Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol NS Driver Packaging specifications Inner circuit (Unit mm) Package Taping

 6.2. Size:1808K  rohm
 2scr544p5.pdf

2SCR544P5 Datasheet Midium Power Transistors (80V / 2.5A) lOutline l SOT-89 Parameter Value SC-62 VCEO 80V IC 2.5A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=300mV(Max.) (IC/ IB=1A/50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifi

 7.1. Size:1554K  rohm
 2scr544r.pdf

2SCR544R Datasheet NPN 2.5A 80V Middle Power Transistor lOutline l Parameter Value TSMT3 VCEO 80V IC 2.5A SOT-346T SC-96 lFeatures l 1)Suitable for Middle Power Driver lInner circuit l 2)Complementary PNP Types 2SAR544R 3)Low VCE(sat) VCE(sat)=300mV(Max.) (IC/IB=1A/50mA) lApplication l LOW FREQU

 7.2. Size:418K  rohm
 2scr544d.pdf

Midium Power Transistors (80V / 2.5A) 2SCR544D Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor CPT3 6.5 5.1 2.3 0.5 Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 0.75 2) High speed switching 0.65 0.9 2.3 2.3 (1) (2) (3) 0.5 1.0 Applications Driver Packaging specifications Inner