2SCR553R
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SCR553R
Código: NG
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 360
MHz
Capacitancia de salida (Cc): 12
pF
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta: SC96
Búsqueda de reemplazo de transistor bipolar 2SCR553R
2SCR553R
Datasheet (PDF)
..1. Size:375K rohm
2scr553r.pdf 
2SCR553RDatasheetNPN 2.0A 50V Middle Power TransistorlOutline TSMT3Parameter ValueCollector VCEO50VBase IC2.0AEmitter 2SCR553R lFeatures(SC-96) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR553R3) Low VCE(sat)VCE(sat)=0.35V(Max.)(IC/IB=700mA/35mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplicationsMotor driver
7.1. Size:1581K rohm
2scr553p.pdf
2SCR553PDatasheetMiddle Power Transistors (50V / 2A)lOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC2AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=350mV(Max.)(IC/IB=700mA/35mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specifica
7.2. Size:1540K rohm
2scr553pfra.pdf
2SCR553P FRADatasheetMiddle Power Transistor (50V / 2A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC2AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=350mV(Max.)(IC/IB=700mA/35mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHIN
8.1. Size:1546K rohm
2scr554pfra.pdf
2SCR554P FRADatasheetMiddle Power Transistor (80V / 1.5A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC1.5AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=300mV(Max.)(IC/IB=500mA/25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITC
8.2. Size:1815K rohm
2scr554p5.pdf
2SCR554P5DatasheetMiddle Power Transistors (80V / 1.5A)lOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC1.5AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=300mV(Max.)(IC/IB=500mA/25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging speci
8.3. Size:1313K rohm
2scr552pfra.pdf
2SCR552P2SCR552PFRADatasheetNPN 3.0A 30V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO30VBase Collector IC3.0AEmitter 2SCR552PFRA2SCR552P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR552P2SAR552PFRA3) Low VCE(sat)VCE(sat)=0.40V(Max.)(IC/IB=1A/50mA)4) Lead Free/RoHS Co
8.4. Size:435K rohm
2scr554r.pdf
Midium Power Transistors (80V / 1.5A) 2SCR554R Features Dimensions (Unit : mm)1) Low saturation voltage, typicallyTSMT3VCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 25mA)2) High speed switching(3)(1) (2) Structure(1) Base(2) EmitterNPN Silicon epitaxial planar transistor(3) Collector Abbreviated symbol : NH Applications Inner circuitDriver(3) Pa
8.5. Size:236K rohm
2scr552p.pdf
Midium Power Transistors (30V / 3A) 2SCR552P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = 0.4V (Max.) (IC / IB= 1A / 50mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : NFDriver Packaging specifications Inner circuit (Unit : mm)Package Taping(
8.6. Size:239K rohm
2scr554p.pdf
Midium Power Transistors (80V / 1.5A) 2SCR554P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 25mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : NHDriver Packaging specifications Inner circuit (Unit : mm)(2)Package
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