2SCR574D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SCR574D
Código: CR574
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 280 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TO252
Búsqueda de reemplazo de transistor bipolar 2SCR574D
2SCR574D Datasheet (PDF)
2scr574d.pdf
2SCR574DDatasheetNPN 2.0A 80V Middle Power TransistorlOutlinelParameter Value CPTVCEO80VIC2A 2SCR574D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR574D.3) Low VCE(sat)VCE(sat)=0.30V(Max.).(IC/IB=1A/50mA)4) Lead Free/Ro
2scr574d.pdf
isc Silicon NPN Power Transistor 2SCR574DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V =0.3V(max)@(I =1A,I =50mA)CE(sat) C BComplementary NPN types:2SAR574D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
2scr574da07.pdf
2SCR574D A07DatasheetNPN 2.0A 80V Middle Power TransistorlOutlinelParameter Value CPTVCEO80VIC2A 2SCR574D A07 lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR574D.3) Low VCE(sat)VCE(sat)=0.30V(Max.).(IC/IB=1A/50mA)4) Lead
2scr574d3fra.pdf
2SCR574D3 FRADatasheetNPN 2.0A 80V Power TransistorAEC-Q101 QualifiedlOutlinel Parameter Value DPAK VCEO80VIC2ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR574D3 FRA.3) Low VCE(sat)VCE(sat)=300mV(Max.).(IC/IB=1A/50mA)lApplicationlLOW FREQUENCY AMPLIF
2scr572d3fra.pdf
2SCR572D3 FRADatasheetNPN 5.0A 30V Power TransistorAEC-Q101 QualifiedlOutlinel Parameter Value DPAK VCEO30VIC5ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR572D3 FRA.3) Low VCE(sat)VCE(sat)=400mV(Max.).(IC/IB=2A/100mA)lApplicationlLOW FREQUENCY AMPLI
2scr573d.pdf
2SCR573DDatasheetNPN 3.0A 50V Middle Power TransistorlOutlinelParameter Value CPTVCEO50VIC3A 2SCR573D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR573D.3) Low VCE(sat)VCE(sat)=0.35V(Max.).(IC/IB=1A/50mA)4) Lead Free/Ro
2scr573d3.pdf
2SCR573D3DatasheetNPN 3.0A 50V Power TransistorlOutlinel Parameter Value DPAK VCEO50VIC3ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR573D3.3) Low VCE(sat)VCE(sat)=350mV(Max.).(IC/IB=1A/50mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificatio
2scr572d.pdf
2SCR572DDatasheetNPN 5.0A 30V Middle Power TransistorlOutlinelParameter Value CPTVCEO30VIC5A 2SCR572D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR572D.3) Low VCE(sat)VCE(sat)=0.40V(Max.).(IC/IB=2A/100mA)4) Lead Free/R
2scr572d3.pdf
2SCR572D3NPN 5.0A 30V Power TransistorDatasheetlOutlinel Parameter Value DPAK VCEO30VIC5ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary PNP Types : 2SAR572D3.3) Low VCE(sat)VCE(sat)=400mV(Max.).(IC/IB=2A/100mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificati
2scr573da08.pdf
2SCR573D A08DatasheetNPN 3.0A 50V Middle Power TransistorlOutlinelParameter Value CPTVCEO50VIC3A 2SCR573D A08 lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary PNP Types : 2SAR573D.3) Low VCE(sat)VCE(sat)=0.35V(Max.).(IC/IB=1A/50mA)4) Lead
2scr573d.pdf
isc Silicon NPN Power Transistor 2SCR573DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V =0.35V@(I =1A,I =50mA)CE(sat) C BComplementary NPN types:2SAR573D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
2scr572d.pdf
isc Silicon NPN Power Transistor 2SCR572DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V =0.4V@(I =2A,I =0.1A)CE(sat) C BComplementary NPN types:2SAR572D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: LBC857BLT1G
History: LBC857BLT1G
Liste
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