15C01SS-TL-E
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 15C01SS-TL-E
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 15
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.6
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 330
MHz
Capacitancia de salida (Cc): 3.2
pF
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta: SC81
Búsqueda de reemplazo de transistor bipolar 15C01SS-TL-E
15C01SS-TL-E
Datasheet (PDF)
7.1. Size:96K sanyo
15c01ss.pdf
Ordering number : ENN750815C01SSNPN Epitaxial Planar Silicon Transistor15C01SSLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifier, muting circuit.unit : mm2159A[15C01SS]FeaturesTop View Side View Large current capacitance.1.4 Low collector-to-emitter saturation voltage (resistance).0.10.25RCE (s
7.2. Size:501K onsemi
15c01ss.pdf
Ordering number : EN7508A15C01SSBipolar Transistorhttp://onsemi.com( )15V, 0.6A, Low VCE sat NPN Single SSFPApplications Low-frequency Amplifier, muting circuitFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=0.58 [IC=0.7A, IB=35mA] Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm) Small ON
9.1. Size:44K sanyo
15c01m.pdf
Ordering number : ENN750515C01MNPN Epitaxial Planar Silicon Transistor15C01MLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifier, muting circuit.unit : mm2059B[15C01M]Features Large current capacitance.0.30.153 Low collector-to-emitter saturation voltage (resistance).0 to 0.1RCE (sat) typ.=0.58
9.2. Size:28K sanyo
15c01c.pdf
Ordering number : ENN750415C01CNPN Epitaxial Planar Silicon Transistor15C01CLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifier, muting circuit.unit : mm2018B[15C01C]Features Large current capacitance.0.40.163 Low collector-to-emitter saturation voltage (resistance).RCE (sat) typ.=0.58 [IC=0.7A
9.3. Size:216K onsemi
15c01m.pdf
Ordering number : EN7505A15C01MBipolar Transistorhttp://onsemi.com( )15V, 0.7A, Low VCE sat NPN Single MCPApplications Low-frequency Amplifier, muting circuitFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=0.58 [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturization in end products Smal
9.4. Size:210K onsemi
15c01c.pdf
Ordering number : EN7504A15C01CBipolar Transistorhttp://onsemi.com( )15V, 0.7A, Low VCE sat NPN Single CPApplications Low-frequency Amplifier, muting circuitFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=0.58 [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturization in end products Small
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