30C02MH-TL-E Todos los transistores

 

30C02MH-TL-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 30C02MH-TL-E
   Código: CL
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.6 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 540 MHz
   Capacitancia de salida (Cc): 3.3 pF
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SOT323

 Búsqueda de reemplazo de transistor bipolar 30C02MH-TL-E

 

30C02MH-TL-E Datasheet (PDF)

 7.1. Size:273K  onsemi
30c02mh 30c02mh 30c02mh 30c02mh.pdf

30C02MH-TL-E 30C02MH-TL-E

Ordering number : EN7364B30C02MHBipolar Transistorhttp://onsemi.com( )30V, 0.7A, Low VCE sat NPN Single MCPH3Applications Low-frequency Amplifier, high-speed switching, small motor driveFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance)) : RCE(sat) typ=330m [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturizat

 7.2. Size:363K  onsemi
30c02mh.pdf

30C02MH-TL-E 30C02MH-TL-E

Ordering number : EN7364B30C02MHBipolar Transistorhttp://onsemi.com( )30V, 0.7A, Low VCE sat NPN Single MCPH3Applications Low-frequency Amplifier, high-speed switching, small motor driveFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance)) : RCE(sat) typ=330m [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturizat

 9.1. Size:29K  sanyo
30c02s.pdf

30C02MH-TL-E 30C02MH-TL-E

Ordering number : ENN736530C02SNPN Epitaxial Planar Silicon Transistor30C02SLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifier, high-speed switching,unit : mmsmall motor drive.2106A[30C02S]Features0.750.3 Large current capacitance.0.63Low collector-to-emitter saturation voltage (resistance).

 9.2. Size:47K  sanyo
30c02ch.pdf

30C02MH-TL-E 30C02MH-TL-E

Ordering number : ENN736330C02CHNPN Epitaxial Planar Silicon Transistor30C02CHLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifier, high-speed switching,unit : mmsmall motor drive.2150A[30C02CH]Features2.9 Large current capacitance.0.150.4 Low collector-to-emitter saturation voltage (resistance).

 9.3. Size:461K  onsemi
30c02ch.pdf

30C02MH-TL-E 30C02MH-TL-E

Ordering number : EN7363A30C02CHBipolar Transistorhttp://onsemi.com( )30V, 0.7A, Low VCE sat NPN Single CPH3Applications Low-frequency Amplifier, high-speed switching, small motor drive Features Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ.=330m [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturizatio

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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