30C02MH-TL-E Todos los transistores

 

30C02MH-TL-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 30C02MH-TL-E
   Código: CL
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.6 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 540 MHz
   Capacitancia de salida (Cc): 3.3 pF
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SOT323

 Búsqueda de reemplazo de transistor bipolar 30C02MH-TL-E

 

30C02MH-TL-E Datasheet (PDF)

 7.1. Size:273K  onsemi
 30c02mh 30c02mh 30c02mh 30c02mh.pdf pdf_icon

30C02MH-TL-E

Ordering number EN7364B 30C02MH Bipolar Transistor http //onsemi.com ( ) 30V, 0.7A, Low VCE sat NPN Single MCPH3 Applications Low-frequency Amplifier, high-speed switching, small motor drive Features Large current capacity Low collector-to-emitter saturation voltage (resistance)) RCE(sat) typ=330m [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturizat

 7.2. Size:363K  onsemi
 30c02mh.pdf pdf_icon

30C02MH-TL-E

Ordering number EN7364B 30C02MH Bipolar Transistor http //onsemi.com ( ) 30V, 0.7A, Low VCE sat NPN Single MCPH3 Applications Low-frequency Amplifier, high-speed switching, small motor drive Features Large current capacity Low collector-to-emitter saturation voltage (resistance)) RCE(sat) typ=330m [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturizat

 9.1. Size:29K  sanyo
 30c02s.pdf pdf_icon

30C02MH-TL-E

Ordering number ENN7365 30C02S NPN Epitaxial Planar Silicon Transistor 30C02S Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, high-speed switching, unit mm small motor drive. 2106A [30C02S] Features 0.75 0.3 Large current capacitance. 0.6 3 Low collector-to-emitter saturation voltage (resistance).

 9.2. Size:47K  sanyo
 30c02ch.pdf pdf_icon

30C02MH-TL-E

Ordering number ENN7363 30C02CH NPN Epitaxial Planar Silicon Transistor 30C02CH Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, high-speed switching, unit mm small motor drive. 2150A [30C02CH] Features 2.9 Large current capacitance. 0.15 0.4 Low collector-to-emitter saturation voltage (resistance).

MOSTRAR MÁS

Otros transistores... 1DI75E-100 , 1DI75F-055 , 1DI75F-100 , 1SC1383 , 30A02CH-TL-E , 30A02MH-TL-E , 30A02MH-TL-H , 30C02CH-TL-E , C5198 , 30C02MH-TL-H , 4N1815PGP , 4N772GP , 4SCG110 , 4SCG120K , 4SCG160 , 4SCG5714 , 4SDG110 .

History: 2SD181A | 40578 | CHT2222AGP-A | CHT5988ZGP | AC173VII | 2SC3093 | KRA226S

 

 
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