50A02SS-TL-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 50A02SS-TL-E
   Código: XN
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 690 MHz
   Capacitancia de salida (Cc): 3.8 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SC-81

Búsqueda de reemplazo de transistor bipolar 50A02SS-TL-E

50A02SS-TL-E Datasheet (PDF)

7.1. Size:29K sanyo
50a02ss.pdf

Ordering number : ENN749150A02SSPNP Epitaxial Planar Silicon Transistor50A02SSLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifier, high-speed switching,unit : mmsmall motor drive, muting circuit.2159A[50A02SS]Top View Side ViewFeatures1.4 Large current capacitance.0.10.25 Low collector-to-emitte

7.2. Size:415K onsemi
50a02ss.pdf

Ordering number : EN7491A50A02SSBipolar Transistorhttp://onsemi.com ( )50V, 0.4A, Low VCE sat PNP Single SSFPApplications Low-frequency Amplifier, high-speed switching small motor drive, muting circuitFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210m [IC=0.5A, IB=50mA] Ultrasmall package fac

9.1. Size:48K sanyo
50a02mh.pdf

Ordering number : ENN748850A02MHPNP Epitaxial Planar Silicon Transistor50A02MHLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifier, high-speed switching,unit : mmsmall motor drive, muting circuit.2194A[50A02MH]0.3Features0.15 Large current capacitance.3 Low collector-to-emitter saturation voltage (

9.2. Size:34K sanyo
50a02ch.pdf

Ordering number : ENN748750A02CHPNP Epitaxial Planar Silicon Transistor50A02CHLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifier, high-speed switching,unit : mmsmall motor drive, muting circuit.2150A[50A02CH]Features2.90.150.4 Large current capacitance.3 Low collector-to-emitter saturation volt

9.3. Size:278K onsemi
50a02mh.pdf

Ordering number : EN7488A50A02MHBipolar Transistorhttp://onsemi.com ( )50V, 0.5A, Low VCE sat PNP Single MCPH3Applications Low-frequency Amplifier, high-speed switching small motor drive, muting circuitFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ=210m [IC=0.5A, IB=50mA] Small ON-resistance (Ro

9.4. Size:301K onsemi
50a02ch.pdf

50A02CH Bipolar Transistor -50V, -0.5A, Low VCE(sat), PNP Single www.onsemi.com Features High Collector Current Capability Low Collector to Emitter Saturation Voltage (Resistance): RCE(sat) typ=210m [IC=0.5A, IB=50mA] ELECTRICAL CONNECTION Low ON-Resistance (Ron) Pb-Free, Halogen Free and RoHS compliance 31: Base1 2 : EmitterTypical Applications 3

9.5. Size:464K onsemi
50a02ch 50a02ch.pdf

Ordering number : EN7487B50A02CHBipolar Transistorhttp://onsemi.com ( )50V, 0.5A, Low VCE sat PNP Single CPH3Applications Low-frequency Amplifier, high-speed switching, small motor drive, muting circuitFeatures High collector current capability Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210m [IC=0.5A, IB=50mA] Low ON-res

9.6. Size:821K cn hunteck
htm150a02.pdf

HTM150A02P-120V Dual N-Ch Power MOSFETFeature20 VVDS High Speed Power Switching, Logic Level13RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness7 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed CircuitDFN3x3 DC/DC in Telecoms and InductrialPart Number Package MarkingPin 1HTM150A02

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N2945 | 2N2883 | 2SA56

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050