50C02SS-TL-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 50C02SS-TL-E
   Código: YN
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 500 MHz
   Capacitancia de salida (Cc): 2.8 pF
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SC-81

Búsqueda de reemplazo de transistor bipolar 50C02SS-TL-E

50C02SS-TL-E Datasheet (PDF)

7.1. Size:32K sanyo
50c02ss.pdf

Ordering number : ENN751950C02SSNPN Epitaxial Planar Silicon Transistor50C02SSLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifer, high-speed switching,unit : mmsmall motor drive, muting circuit.2159A[50C02SS]FeaturesTop View Side View Large current capacitance.1.4 Low collector-to-emitter saturation

7.2. Size:415K onsemi
50c02ss.pdf

Ordering number : EN7519A50C02SSBipolar Transistorhttp://onsemi.com( )50V, 0.4A, Low VCE sat NPN Single SSFPApplications Low-frequency Amplifer, high-speed switching small motor drive, muting circuitFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=175m [IC=0.5A, IB=50mA] Ultrasmall package facilitates

9.1. Size:51K sanyo
50c02ch.pdf

Ordering number : ENN751550C02CHNPN Epitaxial Planar Silicon Transistor50C02CHLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifer, high-speed switching,unit : mmsmall motor drive, muting circuit.2150A[50C02CH]Features Large current capacitance.2.90.150.4 Low collector-to-emitter saturation voltage

9.2. Size:51K sanyo
50c02mh.pdf

Ordering number : ENN751650C02MHNPN Epitaxial Planar Silicon Transistor50C02MHLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifer, high-speed switching,unit : mmsmall motor drive, muting circuit.2194A[50C02MH]Features0.30.15 Large current capacitance.3 Low collector-to-emitter saturation voltage (r

9.3. Size:302K onsemi
50c02ch.pdf

50C02CH Bipolar Transistor 50V, 0.5A, Low VCE(sat), NPN Single www.onsemi.com Features Large Current Capacitance Low Collector to Emitter Saturation Voltage (Resistance): RCE(sat) typ=175m [IC=0.5A, IB=50mA] ELECTRICAL CONNECTION Ultrasmall Package Facilitates Miniaturization in End Products Small ON-Resistance (Ron) 31: Base1 2 : EmitterTypical Appl

9.4. Size:279K onsemi
50c02mh.pdf

Ordering number : EN7516A50C02MHBipolar Transistorhttp://onsemi.com( )50V, 0.5A, Low VCE sat NPN Single MCPH3Applications Low-frequency Amplifer, high-speed switching small motor drive, muting circuitFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=175m [IC=0.5A, IB=50mA] Ultrasmall package facilitates

9.5. Size:2733K blue-rocket-elect
brcs150c02ya.pdf

BRCS150C02YA Rev.A Feb.-2023 DATA SHEET / Descriptions PDFN33-8L Complementary Enhancement MOSFET in a PDFN33-8L Plastic Package. / Features N-channel P-channel VDS(V)=20V VDS(V)=-20V ID=28A ID=-25A RDS(ON)

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2N4906

Liste

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