55GN01CA-TB-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number : ENA1111A55GN01CARF Transistorhttp://onsemi.com10V, 70mA, fT=5.5GHz, NPN Single CPFeatures High cutoff frequency : fT=5.5GHz typ High gain : S21e =9.5dB typ (f=1GHz) 2SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-to-Emitter Voltage VCEO 10 VEmitter-t

Ordering number : ENA1111 55GN01CASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF Wide-band Low-noise55GN01CAAmplifier ApplicationsFeatures High cutoff frequency : fT= 5.5GHz typ. High gain : S21e2=9.5dB typ (f=1GHz).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage V

55GN01FAOrdering number : ENA1113ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF Wide-band Low-noise55GN01FAAmplifier ApplicationsFeatures High cut-off frequency : fT=5.5GHz typ High gain : S21e =11dB typ (f=1GHz) 2 =19dB typ (f=400MHz) Ultrasmall package permitting applied sets to be small and slim Halogen free compliance

Ordering number : ENA1114A55GN01MARF Transistorhttp://onsemi.com10V, 70mA, fT=5.5GHz, NPN Single MCPFeatures High cut-off frequency : fT=5.5GHz typ High gain : S21e =10dB typ (f=1GHz) 2SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-to-Emitter Voltage VCEO 10 VEmitter-

DATA SHEETwww.onsemi.comRF Transistor3110 V, 70 mA, fT = 5.5 GHz, NPN Single SSFP2SOT-623 / SSFP55GN01FACASE 631ACFeatures High Cut-off Frequency: fT = 5.5 GHz TypMARKING DIAGRAM High Gain: S21e2 = 11 dB Typ (f = 1 GHz)S21e2 = 19 dB Typ (f = 400 MHz) Ultrasmall Package Permitting Applied Sets to be Small and SlimZD This Device is Pb-Free