55GN01MA Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 55GN01MA

Código: ZD

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 10 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.07 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3000 MHz

Capacitancia de salida (Cc): 1 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-323

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55GN01MA datasheet

 ..1. Size:217K  onsemi
 55gn01ma 55gn01ma.pdf pdf_icon

55GN01MA

Ordering number ENA1114A 55GN01MA RF Transistor http //onsemi.com 10V, 70mA, fT=5.5GHz, NPN Single MCP Features High cut-off frequency fT=5.5GHz typ High gain S21e =10dB typ (f=1GHz) 2 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-

 8.1. Size:51K  sanyo
 55gn01ca.pdf pdf_icon

55GN01MA

Ordering number ENA1111 55GN01CA SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise 55GN01CA Amplifier Applications Features High cutoff frequency fT= 5.5GHz typ. High gain S21e 2=9.5dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V

 8.2. Size:360K  sanyo
 55gn01fa.pdf pdf_icon

55GN01MA

55GN01FA Ordering number ENA1113A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise 55GN01FA Amplifier Applications Features High cut-off frequency fT=5.5GHz typ High gain S21e =11dB typ (f=1GHz) 2 =19dB typ (f=400MHz) Ultrasmall package permitting applied sets to be small and slim Halogen free compliance

 8.3. Size:204K  onsemi
 55gn01ca-tb-e.pdf pdf_icon

55GN01MA

Ordering number ENA1111A 55GN01CA RF Transistor http //onsemi.com 10V, 70mA, fT=5.5GHz, NPN Single CP Features High cutoff frequency fT=5.5GHz typ High gain S21e =9.5dB typ (f=1GHz) 2 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-t

MOSTRAR MÁS

Otros transistores... 5487-1, 5487-2, 5488-1, 5488-2, 5552-4, 55GN01CA-TB-E, 55GN01FA, 55GN01FA-TL-H, 2SC4793, 55GN01MA-TL-E, 753DCSM, 8050C, 8050SS, 8050SS-C, 8050SS-D, 8550C, 8550SS