8550SS-C Todos los transistores

 ..1. Size:366K  mcc
 8550ss-c 8550ss-d.pdf

MCC 8550SS-C TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 8550SS-D CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. PNP Silicon Collector-current 1.5A Collector-base Voltage 40V Transistors Operating and storage

 8.1. Size:344K  secos
 8550sst.pdf

8550SST -1.5A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. G H Emitter Collector Base J CLASSIFICATION OF hFE (1) A D Millimeter Product-Rank 8550SST-B 8550SST-C 8550SST-D REF. B Min. Max. A 4.

 8.2. Size:224K  jiangsu
 8550ss.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 8550SS TRANSISTOR (PNP) 1.EMITTER FEATURES 2.COLLECTOR General Purpose Switching and Amplification. 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-

 9.1. Size:22K  utc
 utc8550s.pdf

UTC 8 5 5 0 S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR FEATURES *Collector current up to 800mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S APPLICATIONS *Class B push-pull audio amplifier *General purpose applications TO-92 1 EMITTER 2 COLLECTOR 3 BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25 C ,unless otherwise specified )

 9.2. Size:189K  utc
 8550s.pdf

UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH 3 CURRENT SMALL SIGNAL PNP TRANSISTOR 2 1 SOT-23 DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications. 1 FEATURES TO-92 *Collector current up to 700mA *Collector-Emitter vo

 9.3. Size:279K  auk
 sta8550sf.pdf

 9.4. Size:547K  jiangsu
 8550s.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR (PNP) TO-92 FEATURE Excellent hFE linearity 1. EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit 8550S=Device code Solid dot=Green molding compound device, 8550S Z if none,the normal device Z=Rank of hFE XXX=Code 1 ORDERING INFORMATION Part Number

 9.5. Size:346K  jiangsu
 m8550s.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8550S TRANSISTOR (PNP) TO-92 FEATURES 1.EMITTER Power Dissipation 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3.BASE Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collecto

 9.6. Size:350K  kec
 mps8550s.pdf

SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. E FEATURE L B L Complementary to MPS8050S. DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 MAXIMUM RATING (Ta=25 ) H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 0.10 Q L 0.55 P P M 0.20 M

 9.7. Size:352K  kec
 ktc8550s.pdf

SEMICONDUCTOR KTC8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to KTC8050S. DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 MAXIMUM RATING (Ta=25 ) G 1.90 H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 0.10 Q L 0.55 VCBO -35 V C

 9.8. Size:603K  kec
 mps8550sc.pdf

SEMICONDUCTOR MPS8550SC TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE Complementary to MPS8050SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -1,200 mA PC * Collector Power Dissipation 350 mW Tj Junctio

 9.9. Size:166K  lge
 8550s to-92.pdf

8550S(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA

 9.10. Size:500K  willas
 8550slt1.pdf

FM120-M WILLAS 8550SLT1THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers SOT-23 better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to

 9.11. Size:55K  hsmc
 ha8550s.pdf

Spec. No. HE6109 HI-SINCERITY Issued Date 1997.09.05 Revised Date 2005.01.20 MICROELECTRONICS CORP. Page No. 1/5 HA8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. TO-92 Features High DC Current Gain (hFE=100 500 at IC=150mA) Complementary to HA8050S Absolute Maximum Ratings Maximum Temperatu

 9.12. Size:55K  hsmc
 he8550s.pdf

Spec. No. HE6129 HI-SINCERITY Issued Date 1993.01.15 Revised Date 2004.07.26 MICROELECTRONICS CORP. Page No. 1/5 HE8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8550S is designed for general purpose amplifier applications. Features TO-92 High DC Current gain 100-500 at IC=150mA Complementary to HE8050S Absolute Maximum Ratings Maximum Temperatures

 9.13. Size:234K  lrc
 l8550plt1g l8550qlt1g l8550rlt1g l8550slt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550PLT1G Series PNP Silicon S-L8550PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 2 DEVICE MARKING AND ORDERING INFORMATION SOT

 9.14. Size:234K  lrc
 l8550plt1g l8550plt3g l8550qlt1g l8550qlt3g l8550rlt1g l8550rlt3g l8550slt1g l8550slt3g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550PLT1G Series PNP Silicon S-L8550PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 2 DEVICE MARKING AND ORDERING INFORMATION SOT

 9.15. Size:128K  shantou-huashan
 hc8550s.pdf

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC8550S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 TO-92 Tj Juncttion Temperature 150 PC Collector Dissipation

 9.16. Size:127K  shantou-huashan
 h8550s.pdf

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H8550S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 TO-92 Tj Juncttion Temperature 150 PC Collector Dissipation

 9.17. Size:976K  kexin
 kst8550s.pdf

SMD Type Transistors SMD Type PNP Transistors KST8550S SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector current IC-=0.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage V

 9.18. Size:982K  kodenshi
 k8550s.pdf