B562 Todos los transistores

 ..1. Size:225K  china
 b562.pdf

B562 PNP silicon APPLICATION AMPLIFIER APPLICATIONSWITCH APPLICATION. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -25 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current IC -1 A Collector Power Dissipation PC 900 mW Junction Temperature TJ 150 Storage Tem

 0.1. Size:268K  international rectifier
 irfb5620pbf.pdf

PD - 96174 DIGITAL AUDIO MOSFET IRFB5620PbF Features Key Parameters Key Parameters Optimized for Class-D Audio VDS 200 V Amplifier Applications RDS(ON) typ. @ 10V m 60 Low RDSON for Improved Efficiency Qg typ. 25 nC Low QG and QSW for Better THD and Improved Qsw typ. 9.8 nC RG(int) typ. 2.6 Efficiency TJ max 175 C Low QRR for Better THD and Lower EM

 0.2. Size:214K  mcc
 2sb562-b.pdf

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB562 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low Frequency Power Amplifier. PNP Epitaxial Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Silicon Transistor Case Material Molded Plastic. UL Flammability

 0.3. Size:214K  mcc
 2sb562-c.pdf

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB562 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low Frequency Power Amplifier. PNP Epitaxial Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Silicon Transistor Case Material Molded Plastic. UL Flammability

 0.4. Size:244K  utc
 2sb562.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SB562 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER 1 FEATURES TO-92 * Low frequency power amplifier * Complement to 2SD468 1 TO-92NL ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB562L-x-T92-B 2SB562G-x-T92-B TO-92 E C B Tape Box 2SB562L-x-T92-K 2SB562G-x-T92-K TO-92

 0.5. Size:30K  hitachi
 2sb562.pdf

2SB562 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD468 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB562 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 1

 0.6. Size:643K  cn vbsemi
 vb562k.pdf

VB562K www.VBsemi.com N- and P-Channel 6 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.660 at VGS = 10 V 0.80 TrenchFET Power MOSFET N-Channel 60 0.810 at VGS = 4.5 V 0.75 100 % Rg Tested 1.970 at VGS = - 10 V - 0.55 Compliant to RoHS Directive 2002/95/EC P-Channel - 60 2.350 at

 0.7. Size:244K  inchange semiconductor
 irfb5620.pdf

isc N-Channel MOSFET Transistor IRFB5620 IIRFB5620 FEATURES Static drain-source on-resistance RDS(on) 72.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and repetitive avalanche capability ABSOLUTE MAXIMUM RATIN