B764 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

B764 PNP silicon APPLICATIONVoltage Regulator, Relay Lamp Driver Electrical Equipment Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -60 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -5 VCollector current IC -1 ACollector Power Dissipation PC 900 mWJunction Temperat

2SB764L PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE Power dissipation PCM: 0.9 W (Tamb=25) Collector current ICM: -1 A TO-92L Collector-base voltage V(BR)CBO: -60 V G H1Emitter Operating and storage junction temperature range 2Collector3Base JTJ,

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS CLB764 PNPCLD863 NPNTO-92Plastic PackageBCEVoltage Regulator, Relay Lamp Driver Electrical Equipment ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C )DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 60 VVCEOCollector Emitter Voltage 5

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyEPITAXIAL PLANAR SILICON TRANSISTORS CSB764 PNPCSD863 NPNTO-92LPlastic PackageVoltage Regulator, Relay Lamp Driver Electrical Equipment ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C )DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 60 VVCEOCollector Emitter Voltage 50 VVEB

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate TransistorsTO 92L 2SB764 TRANSISTOR (PNP)1. EMITTER2. COLLECTORFEATURES General Purpose Switching Application3. BASE Equivalent Circuit dot = Greenmolding compound device, if none, the normal device ORDERING INFORMATION Part N

SEMICONDUCTOR KTB764TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORVOLTAGE REGULATOR, RELAY, BDLAMP DRIVER, INDUSTRIAL USEDIM MILLIMETERSFEATURESA 7.20 MAXB 5.20 MAXPHigh Voltage : VCEO=-50V(Min.).C 0.60 MAXDEPTH:0.2D 2.60 MAXHigh Current : IC(Max.)=-1A.E 1.15 MAXCF 1.27SHigh Transition Frequency : fT=150MHz(Typ.).G 1.70 MAXQH 0.55 MAXKWide Area o