BC637G Todos los transistores

 ..1. Size:96K  onsemi
 bc637g bc639zl1g.pdf

BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc BC637 60 1 BC639 80 EMITTER Collector - Base Voltage VCBO Vdc BC637 60 BC639 80 Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 1.0 Adc TO-

 9.1. Size:116K  motorola
 bc635 bc637 bc639.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC635/D High Current Transistors BC635 NPN Silicon BC637 BC639 COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 635 637 639 Rating Symbol Unit CASE 29 04, STYLE 14 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 45 60 80 Vdc Collector Base Voltage VCBO 45 60 80 Vdc Emitter Base Voltage

 9.2. Size:47K  philips
 bc635 bc637 bc639.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification 2001 Oct 10 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLIC

 9.3. Size:49K  philips
 bc635 bc637 bc639 3.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors 1999 Apr 23 Product specification Supersedes data of 1997 Mar 12 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLI

 9.4. Size:153K  philips
 bc637 bcp55 bcx55.pdf

BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistors Rev. 07 25 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC637[2] SOT54 SC-43A TO-92 BC638 BCP55 SOT223 SC-73 - BCP52 BCX55 SOT89 SC-62 TO-243 BCX52 [1] Valid for all available sel

 9.5. Size:55K  fairchild semi
 bc635 bc637 bc639.pdf

BC635/637/639 Switching and Amplifier Applications Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1K BC635 45 V BC637 60 V BC639 100 V VCES Collector-Emitter Voltage BC635 45 V BC637 6

 9.6. Size:92K  onsemi
 bc637 bc639 bc63916.pdf

BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc BC637 60 1 BC639 80 EMITTER Collector - Base Voltage VCBO Vdc BC637 60 BC639 80 Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 1.0 Adc TO-

 9.7. Size:115K  cdil
 bc635 bc636 bc637 bc638 bc639 bc640.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" B C E High Current Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 C) BC635 BC637 BC639 DESCRIPTION SYMBOL BC636 BC638 BC640 UNIT VCE

 9.8. Size:596K  jiangsu
 bc635 bc637 bc639.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN) 1. EMITTER FEATURES High current transistors 2. COLLECTOR 3. BASE BC635 BC637 BC639 XXX XXX XXX Equivalent Circuit 1 1 1 BC635,BC637,BC639=Device code Solid dot=Green molding compound device, if none,the normal device XXX=Code

 9.9. Size:28K  kec
 bc637.pdf

SEMICONDUCTOR BC637 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES Complementary to BC638. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 H 0.45 VCBO Collector-Base Voltage 60 V _ H J 14.00 + 0.50 K 0.55 MAX VCEO F F Collector-Emitte

 9.10. Size:154K  lge
 bc635 bc637 bc639.pdf

BC635/637/639(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High current transistors Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 100 V VCEO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 80 V