BC63916 Todos los transistores

BC63916 Switching and Amplifier Applications TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1K 100 V VCES Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A P

BC63916 NPN Epitaxial Silicon Transistor Features Switching and Amplifier Applications TO-92 1. Emitter 2. Collector 1 1 3. Base 2 2 3 3 Straight Lead Bent Lead Bulk Packing Tape & Reel Ammo Packing Ordering Information Part Number Top Mark Package Packing Method BC63916-D74Z BC639-16 TO-92 3L Ammo BC63916-D27Z BC639-16 TO-92 3L Tape and Reel Absolute Maximum Ratings(1)

BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc BC637 60 1 BC639 80 EMITTER Collector - Base Voltage VCBO Vdc BC637 60 BC639 80 Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 1.0 Adc TO-

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC635/D High Current Transistors BC635 NPN Silicon BC637 BC639 COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 635 637 639 Rating Symbol Unit CASE 29 04, STYLE 14 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 45 60 80 Vdc Collector Base Voltage VCBO 45 60 80 Vdc Emitter Base Voltage

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification 2001 Oct 10 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLIC

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors 1999 Apr 23 Product specification Supersedes data of 1997 Mar 12 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLI

BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors Rev. 08 22 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC639[2] SOT54 SC-43A TO-92 BC640 BCP56 SOT223 SC-73 - BCP53 BCX56 SOT89 SC-62 TO-243 BCX53 [1] Valid for all available sel

BC635/637/639 Switching and Amplifier Applications Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1K BC635 45 V BC637 60 V BC639 100 V VCES Collector-Emitter Voltage BC635 45 V BC637 6

BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc BC637 60 1 BC639 80 EMITTER Collector - Base Voltage VCBO Vdc BC637 60 BC639 80 Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 1.0 Adc TO-

BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc BC637 60 1 BC639 80 EMITTER Collector - Base Voltage VCBO Vdc BC637 60 BC639 80 Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 1.0 Adc TO-

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" B C E High Current Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 C) BC635 BC637 BC639 DESCRIPTION SYMBOL BC636 BC638 BC640 UNIT VCE

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN) 1. EMITTER FEATURES High current transistors 2. COLLECTOR 3. BASE BC635 BC637 BC639 XXX XXX XXX Equivalent Circuit 1 1 1 BC635,BC637,BC639=Device code Solid dot=Green molding compound device, if none,the normal device XXX=Code

BC635/637/639(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High current transistors Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 100 V VCEO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 80 V