BC808-40LT1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC808-40LT1G
Código: 5G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 10
pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar BC808-40LT1G
BC808-40LT1G
Datasheet (PDF)
..1. Size:164K onsemi
bc808-25lt1g sbc808-25lt1g bc808-40lt1g.pdf
BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeaturesCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTER3MAXIMUM RATINGSRating Symbol Value U
..2. Size:126K onsemi
bc808-40lt1g bc808-25lt1g bc808-40lt1g bc808-25lt1g.pdf
BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3Compliant1BASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO -25 V3Collector - Base Voltage VCBO -30 V1Emitter - Base Voltage VEBO -5.0 V2Collector Current -
..3. Size:97K onsemi
bc808-25lt1g bc808-40lt1g.pdf
BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeaturesCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTER3MAXIMUM RATINGSRating Symbol Value U
6.1. Size:175K semtech
bc807-16 bc807-25 bc807-40 bc808-16 bc808-25 bc808-40.pdf
BC807 / BC808-AH PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 and BC818 are recommended. TO-236 Plastic Package Features AEC-Q101 Qualified and PPAP Capable Halogen and A
6.2. Size:342K agertech
bc807-16 bc807-25 bc807-40 bc808-16 bc808-25 bc808-40.pdf
BC807/BC808-16/-25/-40PNP TransistorFeaturesSOT-23 For switching, AF driver and amplifier applications These transistors are subdivided into three groups-16, -25 and -40, according to their current gain. Ascomplementary types the NPN transistors BC817 andBC818 are recommended1 Base 2. Emitter 3. CollectorAbsolute Maximum Ratings (T =25, unless otherwisenoted)APa
8.1. Size:136K onsemi
sbc808-25lt1g.pdf
BC808-25LT1G,SBC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorshttp://onsemi.comPNP SiliconCOLLECTOR3Features AEC-Q101 Qualified and PPAP Capable1 S Prefix for Automotive and Other Applications Requiring UniqueBASESite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2CompliantEMITTER3MAXIMUM RATINGS
8.2. Size:128K onsemi
bc808-25lt1-40lt1.pdf
BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3Compliant1BASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO -25 V3Collector - Base Voltage VCBO -30 V1Emitter - Base Voltage VEBO -5.0 V2Collector Current -
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