BC817-25LT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC817-25LT3G
Código: 6B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BC817-25LT3G
BC817-25LT3G Datasheet (PDF)
bc817-25lt3g.pdf
BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian
sbc817-25lt3g.pdf
BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian
bc817-16lt1g bc817-25lt1g bc817-40lt1g.pdf
BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorswww.onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Compliant
sbc817-25lt1g.pdf
BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian
bc817-16lt1g nsvbc817-16lt1g bc817-25lt1g sbc817-25lt1g bc817-40lt1g sbc817-40lt1g.pdf
BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorswww.onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Compliant
bc817-25lt1g bc817-40lt1g.pdf
BC817-16LT1G,BC817-25LT1G,BC817-40LT1GGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO 45 V3Collector - Base Voltage VCBO 50 VEmitter - Base Voltage VEBO 5.0 V12Collect
bc817-16lt1g bc817-25lt1g bc817-25lt1g.pdf
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lbc817-16lt1g lbc817-25lt1g lbc817-40lt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC817-16LT1GLBC817-25LT1G We declare that the material of product compliance with RoHS requirements.LBC817-40LT1G3MAXIMUM RATINGSRating Symbol Value Unit 1CollectorEmitter Voltage V CEO 45 V 2CollectorBase Voltage V CBO 50 VSOT23 EmitterBase Voltage V EBO 5.0 VCollector Current Contin
lbc817-25lt1g.pdf
LESHAN RADIO COMPANY, LTD.LBC817-16LT1GLBC817-25LT1GGeneral Purpose TransistorsLBC817-40LT1GNPN SiliconS-LBC817-16LT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-25LT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-40LT1G3MA
Otros transistores... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , TIP142 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: KSC3158Y | MP3563
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050