BC817-40LT1G Todos los transistores

 

BC817-40LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BC817-40LT1G
   Código: 6C
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 250
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar BC817-40LT1G

 

BC817-40LT1G Datasheet (PDF)

 ..1. Size:194K  onsemi
bc817-16lt1g bc817-25lt1g bc817-40lt1g.pdf

BC817-40LT1G
BC817-40LT1G

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorswww.onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Compliant

 ..2. Size:139K  onsemi
bc817-16lt1g nsvbc817-16lt1g bc817-25lt1g sbc817-25lt1g bc817-40lt1g sbc817-40lt1g.pdf

BC817-40LT1G
BC817-40LT1G

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorswww.onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Compliant

 ..3. Size:125K  onsemi
bc817-25lt1g bc817-40lt1g.pdf

BC817-40LT1G
BC817-40LT1G

BC817-16LT1G,BC817-25LT1G,BC817-40LT1GGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO 45 V3Collector - Base Voltage VCBO 50 VEmitter - Base Voltage VEBO 5.0 V12Collect

 0.1. Size:89K  onsemi
sbc817-40lt1g.pdf

BC817-40LT1G
BC817-40LT1G

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

 0.2. Size:269K  lrc
lbc817-16lt1g lbc817-25lt1g lbc817-40lt1g.pdf

BC817-40LT1G
BC817-40LT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC817-16LT1GLBC817-25LT1G We declare that the material of product compliance with RoHS requirements.LBC817-40LT1G3MAXIMUM RATINGSRating Symbol Value Unit 1CollectorEmitter Voltage V CEO 45 V 2CollectorBase Voltage V CBO 50 VSOT23 EmitterBase Voltage V EBO 5.0 VCollector Current Contin

 0.3. Size:280K  lrc
lbc817-40lt1g.pdf

BC817-40LT1G
BC817-40LT1G

LESHAN RADIO COMPANY, LTD.LBC817-16LT1GLBC817-25LT1GGeneral Purpose TransistorsLBC817-40LT1GNPN SiliconS-LBC817-16LT1GS-LBC817-25LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site andS-LBC817-40LT1GControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MA

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History: 2SC1623L6-T3 | 2SD1797

 

 
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