BC848A-G Todos los transistores

 

BC848A-G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BC848A-G
   Código: 1J
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 110
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar BC848A-G

 

BC848A-G Datasheet (PDF)

 ..1. Size:145K  comchip
bc848a-g bc848b-g.pdf

BC848A-G
BC848A-G

Small Signal TransistorBC846A-G Thru. BC848C-G (NPN)RoHS DeviceFeatures -Power dissipationOPCM: 0.20W (@TA=25 C)SOT-23 -Collector currentICM: 0.1A -Collector-base voltage0.118(3.00)0.110(2.80)VCBO: BC846=80V3BC847=50V0.055(1.40)BC848=30V0.047(1.20) -Operating and storage junction temperature 1 2Orange: TJ, TSTG= -65 to +150 C 0.079(2.00)0.071(1.80)

 7.1. Size:536K  panjit
bc846a-au bc847a-au bc848a-au bc846b-au bc847b-au bc848b-au bc849b-au bc850b-au bc847c-au bc848c-au bc849c-au bc850c-au.pdf

BC848A-G
BC848A-G

BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 30/45/65 Volt POWER 330 mWattFEATURES General purpose amplifier applications0.120(3.04)0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Acqire quality system certificate : TS16949 AEC-Q101 qualified Lead free in compliance with EU RoHS 20

 8.1. Size:207K  motorola
bc846awt bc847awt bc848awt bc849awt bc850awt.pdf

BC848A-G
BC848A-G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC846AWT1/DGeneral Purpose TransistorsBC846AWT1,BWT1NPN SiliconBC847AWT1,BWT1,COLLECTOR CWT1These transistors are designed for general purpose amplifier3BC848AWT1,BWT1,applications. They are housed in the SOT323/SC70 which isdesigned for low power surface mount applications.CWT11BASE2EMITTERMAX

 8.2. Size:220K  motorola
bc846alt bc847alt bc848alt bc849alt bc850alt.pdf

BC848A-G
BC848A-G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC846ALT1/DBC846ALT1,BLT1General Purpose TransistorsBC847ALT1,NPN SiliconCOLLECTORBLT1,CLT1 thru3BC850ALT1,BLT1,1 CLT1BASEBC846, BC847 and BC848 areMotorola Preferred Devices2EMITTERMAXIMUM RATINGSBC847 BC848BC850 BC849Rating Symbol BC846 Unit3CollectorEmitter Voltage VCEO 65 45 30 V1C

 8.3. Size:299K  diodes
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848A-G
BC848A-G

BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Complementary PNP Types: BC856 BC858 Case material: molded plastic, Green molding compound For switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Note

 8.4. Size:46K  diodes
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw.pdf

BC848A-G
BC848A-G

BC846AW - BC848CWNPN SURFACE MOUNT SMALL SIGNAL TRANSISTORFeatures Ideally Suited for Automatic InsertionSOT-323 Complementary PNP Types AvailableA(BC856W-BC858W) Dim Min MaxCA For Switching and AF Amplifier Applications 0.25 0.40B1.15 1.35Mechanical DataB CC2.00 2.20 Case: SOT-323, Molded PlasticD0.65 NominalB E Case material - UL Flammability Rating

 8.5. Size:876K  infineon
bc847a bc847b bc847bl3 bc847bw bc847c bc847cw bc848a bc848b bc848bl3 bc848bw bc848c bc848cw bc849b bc849c bc849cw bc850b bc850bw bc850c bc850cw.pdf

BC848A-G
BC848A-G

BC847...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC847BL3 is not qualified according AEC Q101Type Marking Pin

 8.7. Size:666K  mcc
bc846aw-bw bc847aw-bw-cw bc848aw-bw-cw sot-323.pdf

BC848A-G
BC848A-G

MCCBC846AW/BWMicro Commercial ComponentsMicro Commercial ComponentsBC847AW/BW/CW20736 Marilla Street ChatsworthCA 91311BC848AW/BW/CWPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information) Low current (max. 100mA)General Purpose Low voltage (max. 65V) Epo

 8.8. Size:622K  mcc
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c bc849b bc849c.pdf

BC848A-G
BC848A-G

M C CTMMicro Commercial Components BC846A thru BC849CStatic Characteristic h I FE C 10 3000COMMON COMMON EMITTER EMITTER V CE= 5V T a =25 1000 8 T =100 a 20uA18uA6 16uAT =25 14uA a 12uA4 100 10uA 8uA 6uA 24uA I B=2uA 0 100 1 2 3 4 5 6 7 1 10 100 COLLECTOR CURRENT IC (mA) COLLECTOREMITTER VOLTAGE V CE (V) V I

 8.9. Size:111K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf

BC848A-G
BC848A-G

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

 8.10. Size:108K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf

BC848A-G
BC848A-G

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

 8.11. Size:158K  onsemi
bc846alt1g bc846blt1g bc846clt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf

BC848A-G
BC848A-G

General PurposeTransistorsNPN SiliconBC846ALT1G SeriesFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR S and NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

 8.12. Size:108K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g nsvbc849blt1g bc849clt1g bc849clt3g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf

BC848A-G
BC848A-G

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

 8.13. Size:131K  onsemi
bc848alt1g bc850blt1g.pdf

BC848A-G
BC848A-G

BC846ALT1 SeriesBC846, BC847 and BC848 are Preferred DevicesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V Pb-Free Packages are Available1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO V

 8.14. Size:68K  onsemi
bc848awt1g bc847cwt1g.pdf

BC848A-G
BC848A-G

BC846, BC847, BC848SeriesGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 which isCOLLECTORdesigned for low power surface mount applications.3Features1 Pb-Free Packages are AvailableBASE2EMITTERMAXIMUM RATINGS3Rating Symbol Value UnitSC-7

 8.15. Size:302K  secos
bc846a-bc847a-bc848a.pdf

BC848A-G
BC848A-G

BC846A, BBC847A, B, CElektronische BauelementeBC848A, B, CA suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESADim Min MaxLnA 2.800 3.040General Purpose Transistor NPN Typen3 B 1.200 1.400Collect current : 0.1ASTop ViewO O BnC 0.890 1.110Operating Temp. : -55 C ~ +150 C1 2nD 0.370 0.500RoHS compliant productV GG 1.780 2.040H 0.013

 8.16. Size:201K  taiwansemi
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf

BC848A-G
BC848A-G

BC846A/B, BC847A/B/C, BC848A/B/CTaiwan SemiconductorSmall Signal Product200mW, NPN Small Signal TransistorFEATURES- Epitaxial planar die construction- Surface mount device type- Moisture sensitivity level 1- Matte Tin(Sn) lead finish with Nickel(Ni) under plate- Pb free and RoHS compliant- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC- Halo

 8.17. Size:2205K  htsemi
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848A-G
BC848A-G

BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848VCEO Collector-Emitter Vo

 8.18. Size:1702K  lge
bc846aw-bw bc847aw-bw-cw bc848aw-bw-cw.pdf

BC848A-G
BC848A-G

BC846AW,BWBC847AW,BW,CWBC848AW,BW,CW STO-323 Transistor(NPN)1. BASE 2. EMITTER SOT-3233. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage BC846W 80 BC847W 50 V BC8

 8.19. Size:2832K  wietron
bc846aw bc847aw bc848aw.pdf

BC848A-G
BC848A-G

BC846AW/BWBC847AW/BW/CWBC848AW/BW/CWGeneral Purpose TransistorCOLLECTOR33NPN SiliconP b Lead(Pb)-Free112BASE2EMITTERSOT-323(SC-70)Maximum Ratings (T =25C Unlesso therwise noted)ARating Symbol Value UnitCollector-Emitter Voltage BC846 65 45 V BC847 CEO V 30 BC848 Collector-Base Voltage BC846 80VVBC847 CBO 50BC848 30Emitter-Base Voltag

 8.20. Size:242K  semtech
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf

BC848A-G
BC848A-G

BC846BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collector Emitter Voltage BC846 VCEO 65 V BC847, BC850 VCEO 45 V BC848, BC849 VCEO 30 V Emitter Base Voltage BC

 8.21. Size:401K  lrc
lbc846awt1g lbc846bwt1g lbc847awt1g lbc847bwt1g lbc847cwt1g lbc848awt1g lbc848bwt1g lbc848cwt1g.pdf

BC848A-G
BC848A-G

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GS- Prefix for Automotive and Other Applications Requiring Unique Site andControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATIO

 8.22. Size:394K  lrc
lbc848awt1g.pdf

BC848A-G
BC848A-G

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconWe declare that the material of product compliance with RoHS requirements.CWT1GS- Prefix for Automotive and Other Applications Requiring Unique Site LBC848AWT1G,BWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free

 8.23. Size:402K  lrc
lbc846alt1g lbc846blt1g lbc847alt1g lbc847blt1g lbc847clt1g lbc848alt1g lbc848blt1g lbc848clt1g lbc849blt1g lbc849clt1g lbc850blt1g lbc850clt1g.pdf

BC848A-G
BC848A-G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

 8.24. Size:402K  lrc
lbc848alt1g.pdf

BC848A-G
BC848A-G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

 8.25. Size:402K  lrc
lbc846alt1g lbc846alt3g lbc846blt1g lbc846blt3g lbc847alt1g lbc847alt3g lbc847blt1g lbc847blt3g lbc847clt1g lbc847clt3g lbc848alt1g lbc848alt3g.pdf

BC848A-G
BC848A-G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C

 8.26. Size:404K  lrc
lbc847clt3g lbc848alt1g lbc848alt3g lbc848blt1g lbc848blt3g lbc848clt1g lbc848clt3g lbc849blt1g lbc849blt3g.pdf

BC848A-G
BC848A-G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

 8.27. Size:446K  panjit
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw bc849bw bc849cw bc850bw bc850cw.pdf

BC848A-G
BC848A-G

BC846AW ~ BC850CWNPN GENERAL PURPOSE TRANSISTORS30/45/65 Volt POWERVOLTAGE 250 mWattFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per

 8.28. Size:1070K  panjit
bc846aw-au bc847aw-au bc848aw-au bc846bw-au bc847bw-au bc848bw-au bc849bw-au bc850bw-au bc847cw-au bc848cw-au bc849cw-au bc850cw-au.pdf

BC848A-G
BC848A-G

BC846AW-AU ~ BC850CW-AUNPN GENERAL PURPOSE TRANSISTORS30/45/65 Volt POWER 250 mWattVOLTAGEFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-323, Plastic

 8.29. Size:330K  panjit
bc846a bc847a bc848a bc846b bc847b bc848b bc849b bc850b bc847c bc848c bc849c bc850c.pdf

BC848A-G
BC848A-G

BC846,BC847,BC848,BC849,BC850 SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 30/45/65 Volt POWER 330 mWattFEATURES0.120(3.04) General purpose amplifier applications0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. .0.056(1.40) (Ha

 8.30. Size:123K  comchip
bc848cw-g bc848aw-g.pdf

BC848A-G
BC848A-G

Small Signal TransistorBC846AW-G Thru. BC848CW-G (NPN)RoHS DeviceFeatures -Power dissipationPCM: 0.15W (@TA=25C)SOT-323 -Collector currentICM: 0.1A0.087 (2.20) -Collector-base voltage0.079 (2.00)VCBO: BC846W=80V3BC847W=50V0.053(1.35)BC848W=30V0.045(1.15) -Operating and storage junction temperature 1 2range: TJ, TSTG= -55 to +150C0.006 (0.15)0.055

 8.31. Size:433K  umw-ic
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848A-G
BC848A-G

RUMW UMW BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848VCEO Collect

 8.33. Size:2633K  high diode
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848A-G
BC848A-G

BC846-8SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking: BC846A=1A;BC846B=1B; BC847A=1E;BC847B=1F;BC847C=1G; BC848A=1J;BC848B=1K;BC848C=1L; CB ESymbol Parameter Value Unit V VCBO Collector-Base Voltage 80 BC846BC847 50 30

 8.34. Size:1245K  mdd
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848A-G
BC848A-G

BC847SOT-23 Plastic-Encapsulate TransistorSOT-23 BC846A, B TRANSISTOR (NPN) BC847A, B, CBC848A, B, C 1. BASE2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier ApplicationsPACKAGE SPECIFICATIONS Box Size QTY/BoxReel DIA. Q'TY/Reel Carton Size Q'TY/CartonPackageReel Size(pcs) (pcs) (mm)(mm) (mm) (pcs)S

 8.35. Size:380K  powersilicon
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848A-G
BC848A-G

DATA SHEET BC846A/B,BC847A/B/C,BC848A/B/C NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30 ~ 65 V CURRENT 100 mA FEATURES IDEALLY SUITED FOR AUTOMATIC INSERTION FOR SWITCHING AND AF AMPLIFIER APPLICATIONS NPN SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC =100mA LEAD FREE AND HALOGEN-FREE MECHANICAL DATA

 8.38. Size:2177K  wpmtek
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf

BC848A-G
BC848A-G

BC846/847/848/849/850 TRANSISTORNPNFEATURES Low current (max. 100 mA) Low voltage (max. 65 V).APPLICATIONS General purpose switching and amplification.1.Base 2.Emitter 3.Collector DESCRIPTIONSOT-23 Plastic PackageNPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/860.ABSOLUTE MAXIMUM RATINGS (T =25C)AParameter Symbol Val

 8.39. Size:1237K  cn yongyutai
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848A-G
BC848A-G

BC846/7/8 TRANSI STOR (NPN)BC846BC847BC848Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Ideaiiy suited for automatic insertion For switching and AF amplifier applicationsMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage 80 BC846 VCBO 50 V BC847 30 BC848Collector-Emitter Voltage 6

 8.40. Size:553K  cn zre
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848A-G
BC848A-G

BC846/BC847/BC848 TRANSISTOR(NPN)SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applicationsMarking: Mechanical DataBC846A=1A BC846B=1B Small Outline Plastic PackageBC847A=

 8.41. Size:3444K  cn twgmc
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf

BC848A-G
BC848A-G

BC846 THRU BC850BC846 THRU BC850BC846 THRU BC850BC846 THRU BC850BC8 46 THRU BC8 50TRANSISTOR(NPN)FEATURE Low current (max. 100 mA)SOT-23 Low voltage (max. 65 V).1BASE APPLICATIONS2EMITTER General purpose switching and amplification. 3COLLECTOR DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/86

 8.42. Size:303K  cn yangzhou yangjie elec
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848A-G
BC848A-G

RoHS RoHSCOMPLIANT COMPLIANTBC846/BC847/BC848 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Marking: BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K: BC848C=1L Maximum Ratings (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage 80 BC84

 8.43. Size:211K  cn yangzhou yangjie elec
bc846aq bc846bq bc847aq bc847bq bc847cq bc848aq bc848bq bc848cq.pdf

BC848A-G
BC848A-G

RoHS COMPLIANT BC846Q THRU BC848Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications General purpose switching and amplification Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solderable per J

 8.44. Size:302K  cn yangzhou yangjie elec
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw.pdf

BC848A-G
BC848A-G

RoHS RoHSCOMPLIANT COMPLIANTBC846AW THRU BC848CW NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL

 8.45. Size:455K  cn doeshare
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BC848A-G
BC848A-G

BC846/BC847/BC848 BC846/BC847/BC848 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications SOT-23 Small Outline Plastic Package DEVICE MARKING CODE:

 8.46. Size:158K  cn fosan
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BC848A-G
BC848A-G

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. BC846BC847BC848 FEATURES NPN General Purpose Transistor MAXIMUM RATINGS Characteristic Symbol Unit BC846A,B,BC847A,B,C BC848A,B,C C Collector-Emitter Voltage V 65 45 30 Vdc CEO Collector-Base V

 8.47. Size:221K  cn fosan
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf

BC848A-G
BC848A-G

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDBC846/847/848MAXIMUM RATINGS Characteristic Symbol Unit(BC846A,B) (BC847A,B,C) (BC848A,B,C) Collector-Emitter VoltageV 65 45 30 VdcCEOCollector-Base VoltageV 80 50 30 VdcCBOEmitter-Base Voltage

 8.48. Size:637K  cn hottech
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BC848A-G
BC848A-G

BC848BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to BC858 Ideally suited for automatic insertion For switching and AF amplifier applications Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless othe

 8.49. Size:255K  cn hottech
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848A-G
BC848A-G

Plastic-Encapsulate TransistorsFEATURES(NPN)BC846A/BFor general AF applications(NPN)BC847A/B/CHigh collector current(NPN)BC848A/B/CHigh current gainLow collector-emitter saturation voltageMarkingBC846A BC846B BC847A BC847B1A 1B 1E 1FBC847C BC848A BC848B BC848C1. BASE2. EMITTER SOT-231G 1J 1K 1L3. COLLECTOMAXIMUM RATINGS (TA=25 unless otherwise noted)Par

 8.50. Size:2559K  cn xch
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf

BC848A-G
BC848A-G

BC846A,B BC847A, B, C BC848A, B, C Features Ideally suited for automatic insertion For Switching and AF Amplifier ApplicationsSOT-23A Dim Min MaxDEVICE MARKING CA 0.37 0.51BC846A=1A; BC846B=1B; B C B1.20 1.40BC847A=1E; BC847B=1F; BC847C=1G; C2.30 2.50TOP VIEWB EBC848A=1J; BC848B=1K: BC848C=1LD0.89 1.03D E

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050

 

 

 
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