BC848AWT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BC848AWT1G

Código: 1J

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 110

Encapsulados: SOT323

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BC848AWT1G datasheet

 ..1. Size:68K  onsemi
 bc848awt1g bc847cwt1g.pdf pdf_icon

BC848AWT1G

BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon http //onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 which is COLLECTOR designed for low power surface mount applications. 3 Features 1 Pb-Free Packages are Available BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-7

 0.1. Size:401K  lrc
 lbc846awt1g lbc846bwt1g lbc847awt1g lbc847bwt1g lbc847cwt1g lbc848awt1g lbc848bwt1g lbc848cwt1g.pdf pdf_icon

BC848AWT1G

LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATIO

 0.2. Size:394K  lrc
 lbc848awt1g.pdf pdf_icon

BC848AWT1G

LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon We declare that the material of product compliance with RoHS requirements. CWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site LBC848AWT1G,BWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATION Pb Free

 6.1. Size:207K  motorola
 bc846awt bc847awt bc848awt bc849awt bc850awt.pdf pdf_icon

BC848AWT1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846AWT1/D General Purpose Transistors BC846AWT1,BWT1 NPN Silicon BC847AWT1,BWT1, COLLECTOR CWT1 These transistors are designed for general purpose amplifier 3 BC848AWT1,BWT1, applications. They are housed in the SOT 323/SC 70 which is designed for low power surface mount applications. CWT1 1 BASE 2 EMITTER MAX

MOSTRAR MÁS

Otros transistores... BC847CWT1G, BC847DS, BC847QAPN, BC847QAS, BC847XMB, BC848A-G, BC848ALT1G, BC848AW-G, 2SC2240, BC848BF, BC848B-G, BC848BL3, BC848BLT1G, BC848BLT3G, BC848BW-G, BC848BWT1G, BC848CDW1T1G