BC856BW-G Todos los transistores

 

BC856BW-G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BC856BW-G

Código: 3B

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 65 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 220

Encapsulados: SOT323

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BC856BW-G datasheet

 ..1. Size:140K  comchip
bc856aw-g bc856bw-g.pdf pdf_icon

BC856BW-G

Small Signal Transistor BC856AW-G Thru. BC858CW-G (PNP) RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications SOT-323 -Power dissipation PCM 0.15W (@TA=25 C) 0.087 (2.20) 0.079 (2.00) -Collector current 3 ICM -0.1A -Collector-base voltage 0.053(1.35) 0.045(1.15) VCBO BC856W= -80V BC857W= -50V 1 2 0.006 (0.15) BC85

 7.1. Size:157K  nxp
bc856w bc856aw bc856bw bc857w bc857aw bc857bw bc857cw bc858w.pdf pdf_icon

BC856BW-G

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC856W; BC857W; BC858W PNP general purpose transistors Product data sheet 2002 Feb 04 Supersedes data of 1999 Apr 12 NXP Semiconductors Product data sheet BC856W; BC857W; PNP general purpose transistors BC858W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter

 7.2. Size:401K  central
bc856bwr bc856awr.pdf pdf_icon

BC856BW-G

BC856W SERIES BC857W SERIES www.centralsemi.com SURFACE MOUNT DESCRIPTION PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE SEE MARKING CODE

 7.3. Size:140K  infineon
bc856a bc856b bc856bw bc857a bc857b bc857bf bc857bl3 bc857bw bc857c bc857cw bc858a bc858b bc858bl3 bc858bw bc858c bc858cw bc859b bc859c bc860b bc860bw bc860cw.pdf pdf_icon

BC856BW-G

BC856...-BC860... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20

Otros transistores... BC850CLT1G , BC850S , BC856ALT1G , BC856AW-G , BC856BDW1T1G , BC856BDW1T3G , BC856BLT1G , BC856BLT3G , 2N2222 , BC856BWT1G , BC856C , BC856LT1 , BC856T , BC857ALT1G , BC857AM , BC857AMB , BC857AW-G .

 

 

 


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