BC857BL3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC857BL3
Código: 3F
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.33 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 1.5 pF
Ganancia de corriente contínua (hfe): 125
Paquete / Cubierta: TSLP3-1
Búsqueda de reemplazo de transistor bipolar BC857BL3
BC857BL3 Datasheet (PDF)
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BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20
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BC857...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC857BL3 is not qualified according AEC Q101Type Marking Pin
bc857bl3.pdf
BC857...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC857BL3 is not qualified according AEC Q101Type Marking Pin
bc857blp4.pdf
BC857BLP4 45V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X2-DFN1006-3 BVCEO > -45V Case Material: Molded Plastic, "Green" Molding Compound. IC = -100mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 0.60mm2 Package Footprint, 13
bc857blp.pdf
BC857BLP 45V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X1-DFN1006-3 BVCEO > -45V Case Material: Molded Plastic, "Green" Molding Compound. IC = -100mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 0.60mm2 Package Footprint, 13
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BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2
nsvbc857blt3g.pdf
BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureshttp://onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2EMITTERMAXIMUM RATINGS (TA = 25C unless other
bc856alt1g bc856blt1g bc857alt1g bc857blt1g bc857clt1g bc858alt1g bc858blt1g bc858clt1g bc859blt1g bc859clt1g.pdf
BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2
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BC856ALT1G Series,SBC856ALT1G SeriesGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTER3MAXIMUM RATINGS
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1Unique Sit
lbc857blt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon Series Moisture Sensitivity Level: 1S-LBC857CLT1G ESD Rating Human Body Model: >4000 V SeriesESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Automotive and Other Applications Requiring Unique Site a
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
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