BCM856DS Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BCM856DS

Código: DS

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 65 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 2.2 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT457

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BCM856DS datasheet

 ..1. Size:104K  philips
bcm856bs bcm856ds.pdf pdf_icon

BCM856DS

BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 7 August 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Product overview Type number Package Package configuration NXP JEITA BCM

 ..2. Size:642K  nxp
bcm856bs bcm856bs-dg bcm856ds bcm856ds-dg.pdf pdf_icon

BCM856DS

BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 7 August 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Product overview Type number Package Package configuration Nexperia JEITA

 ..3. Size:104K  nxp
bcm856bs bcm856ds.pdf pdf_icon

BCM856DS

BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 7 August 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Product overview Type number Package Package configuration NXP JEITA BCM

 8.1. Size:542K  infineon
bcm856s.pdf pdf_icon

BCM856DS

BCM856S PNP Silicon AF Transistor Array Precision matched transistor pair IC 10% 4 5 3 For current mirror applications 6 2 1 Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors Complementary type BCM846S BC856S For orientation in reel see package information below Pb-free (RoHS compliant) package Qualif

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