BCW70LT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BCW70LT1G

Código: H2*

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 7 pF

Ganancia de corriente contínua (hFE): 215

Encapsulados: SOT23

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BCW70LT1G datasheet

 ..1. Size:227K  onsemi
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BCW70LT1G

BCW70LT1G General Purpose Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO -45 Vdc Emitter-Base Voltage VEBO -5.0 Vdc 2 Collector Current - Continuous IC -100 mAdc EMITTER THERMAL CHARACTERISTICS Characteristic Sy

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BCW70LT1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW69LT1/D General Purpose Transistors BCW69LT1 PNP Silicon BCW70LT1 COLLECTOR 3 1 3 BASE 1 2 2 EMITTER CASE 318 08, STYLE 6 SOT 23 (TO 236AB) MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 45 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector Current Continuous IC 100

 6.2. Size:265K  onsemi
 bcw70lt1-d.pdf pdf_icon

BCW70LT1G

BCW70LT1G General Purpose Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO -45 Vdc Emitter-Base Voltage VEBO -5.0 Vdc 2 Collector Current - Continuous IC -100 mAdc EMITTER THERMAL CHARACTERISTICS Characteristic

 6.3. Size:411K  willas
 bcw70lt1.pdf pdf_icon

BCW70LT1G

FM120-M BCW69LT1 WILLAS THRU BCW70LT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. PNP Silicon SOD-123H Lo Featruesw profile surface mounted applica

MOSTRAR MÁS

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