BCY70DCSM Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BCY70DCSM

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-emisor (Vce): 40 V

Corriente del colector DC máxima (Ic): 0.2 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 50

Encapsulados: LCC2

 Búsqueda de reemplazo de BCY70DCSM

- Selecciónⓘ de transistores por parámetros

 

BCY70DCSM datasheet

 ..1. Size:10K  semelab
 bcy70dcsm.pdf pdf_icon

BCY70DCSM

BCY70DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 40V CEO 6.22 0.13 A = 1.27 0.13 I = 0.2A C (0.05

 9.1. Size:51K  philips
 bcy70 bcy71 cnv 2.pdf pdf_icon

BCY70DCSM

DISCRETE SEMICONDUCTORS DATA SHEET M3D361 BCY70; BCY71 PNP general purpose transistors 1997 Jul 11 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP general purpose transistors BCY70; BCY71 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 e

 9.2. Size:232K  cdil
 bcy70 bcy71 bcy72.pdf pdf_icon

BCY70DCSM

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BCY70 , 71, 72 TO-18 Metal Can Package General Purpose Industrial Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL BCY70 BCY71 BCY72 UNIT Collector Emitter Voltage VCEO 40 45 25 V Collector Base Voltage VCB

Otros transistores... BCX17LT1G, BCX19LT1G, BCX5616Q, BCY38A, BCY39A, BCY40A, BCY54A, BCY59DCSM, BD222, BCY71DCSM, BCY72DCSM, BCY78CSM, BCY78DCSM, BCY78-IX, BCY78-VII, BCY78-VIII, BCY78-X