BFT57DCSM Todos los transistores

 

BFT57DCSM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFT57DCSM
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-emisor (Vce): 160 V
   Corriente del colector DC máxima (Ic): 0.2 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 110 MHz
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: LCC2
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BFT57DCSM Datasheet (PDF)

 ..1. Size:10K  semelab
 bft57dcsm.pdf pdf_icon

BFT57DCSM

BFT57DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 160V CEO6.22 0.13 A = 1.27 0.13I = 0.2A C(0.0

 9.1. Size:10K  semelab
 bft57csm.pdf pdf_icon

BFT57DCSM

BFT57CSMDimensions in mm (inches). Bipolar NPN Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar NPN Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 160V A =(0.04 0.004

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

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