BTB1184J3S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTB1184J3S
Código: B1184
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80 MHz
Capacitancia de salida (Cc): 35 pF
Ganancia de corriente contínua (hfe): 270
Paquete / Cubierta: TO252
Búsqueda de reemplazo de transistor bipolar BTB1184J3S
BTB1184J3S Datasheet (PDF)
btb1184j3s.pdf
Spec. No. : C817J3 Issued Date : 2015.02.25 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -50VIC -3ABTB1184J3S RCESAT 130m Features Low VCE(sat) Excellent current gain characteristics RoHS compliant and halogen-free package Symbol Outline BTB1184J3S TO-252(DPAK) BBase CCollector B C
btb1184j3.pdf
Spec. No. : C817J3 Issued Date : 2003.04.18 CYStech Electronics Corp.Revised Date : 2010.12.08 Page No. : 1/6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -50VIC -3ABTB1184J3 RCESAT 130m Features Low VCE(sat) Excellent current gain characteristics Complementary to BTD1760J3 RoHS compliant package Symbol Outline BTB1184J3 TO-252(DPAK) B
btb1188m3r.pdf
Spec. No. : C623M3 Issued Date : 2003.05.25 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30VIC -2ABTB1188M3R RCESAT(typ) 0.22 Features Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A Excellent current gain characteristics Complementary to BTD1766M3 Pb-free lead
btb1188am3.pdf
Spec. No. : C812M3-A Issued Date : 2011.02.17 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -40VIC -2ABTB1188AM3 RCESAT(typ) 0.22 Features Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A Excellent current gain characteristics Complementary to BTD1766AM3 Pb-free lead platin
btb1188m3.pdf
Spec. No. : C812M3 Issued Date : 2003.05.25 CYStech Electronics Corp.Revised Date :2013.08.12 Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30VIC -2ABTB1188M3 RCESAT(typ) 0.22 Features Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A Excellent current gain characteristics Complementary to BTD1766M3 Pb-free lead
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
