BTB1184J3S Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTB1184J3S

Código: B1184

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Capacitancia de salida (Cc): 35 pF

Ganancia de corriente contínua (hFE): 270

Encapsulados: TO252

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BTB1184J3S datasheet

 ..1. Size:382K  cystek
 btb1184j3s.pdf pdf_icon

BTB1184J3S

Spec. No. C817J3 Issued Date 2015.02.25 CYStech Electronics Corp. Revised Date Page No. 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -50V IC -3A BTB1184J3S RCESAT 130m Features Low VCE(sat) Excellent current gain characteristics RoHS compliant and halogen-free package Symbol Outline BTB1184J3S TO-252(DPAK) B Base C Collector B C

 5.1. Size:281K  cystek
 btb1184j3.pdf pdf_icon

BTB1184J3S

Spec. No. C817J3 Issued Date 2003.04.18 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -50V IC -3A BTB1184J3 RCESAT 130m Features Low VCE(sat) Excellent current gain characteristics Complementary to BTD1760J3 RoHS compliant package Symbol Outline BTB1184J3 TO-252(DPAK) B

 8.1. Size:246K  cystek
 btb1188m3r.pdf pdf_icon

BTB1184J3S

Spec. No. C623M3 Issued Date 2003.05.25 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30V IC -2A BTB1188M3R RCESAT(typ) 0.22 Features Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A Excellent current gain characteristics Complementary to BTD1766M3 Pb-free lead

 8.2. Size:245K  cystek
 btb1188am3.pdf pdf_icon

BTB1184J3S

Spec. No. C812M3-A Issued Date 2011.02.17 CYStech Electronics Corp. Revised Date Page No. 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -40V IC -2A BTB1188AM3 RCESAT(typ) 0.22 Features Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A Excellent current gain characteristics Complementary to BTD1766AM3 Pb-free lead platin

MOSTRAR MÁS

Otros transistores... BFT59CSM, BFT59DCSM, BT2222, BT2222A, BT3904, BTA1012E3, BTA1015A3, BTA2039J3, BC558, BTB1236AL3, BTB1426A3, BTB7150N3, BTB772SA3, BTC2328AK3, BTC4621K3, BTD1805D3, C2611