BTC2328AK3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTC2328AK3

Código: C2328A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 MHz

Capacitancia de salida (Cc): 16.5 pF

Ganancia de corriente contínua (hFE): 160

Encapsulados: TO92L

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BTC2328AK3 datasheet

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 btc2328ak3.pdf pdf_icon

BTC2328AK3

Spec. No. C858K3 Issued Date 2014.11.24 CYStech Electronics Corp. Revised Date Page No. 1/8 NPN Epitaxial Planar Transistor BVCEO 30V IC 2A BTC2328AK3 RCESAT(MAX) 333m Features Low Saturation Voltage, V =0.5V(max)@I =1.5A, I =30mA CE(sat) C B Complementary to BTA928AK3 Pb-free lead plating and halogen-free package Symbol Outline TO-92L BTC2328

 9.1. Size:218K  cystek
 btc2383a3.pdf pdf_icon

BTC2328AK3

Spec. No. C316 Issued Date 2005.12.21 CYStech Electronics Corp. Revised Date 2006.03.17 Page No. 1/9 General Purpose NPN Epitaxial Planar Transistor BTC2383A3 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BTA1013A3 Pb-free package Symbol Outlin

 9.2. Size:366K  cystek
 btc2383k3.pdf pdf_icon

BTC2328AK3

Spec. No. C625K3 Issued Date 2014.04.17 CYStech Electronics Corp. Revised Date Page No. 1/8 NPN Epitaxial Planar Transistor BVCEO 160V IC 1A BTC2383K3 RCESAT(MAX) 1 Features High breakdown voltage , BV =160V CEO Low Saturation Voltage, V =0.2V(typ)@I =500mA, I =50mA CE(sat) C B Complementary to BTA1013K3 Pb-free lead plating and halogen-free

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