CET3906E Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CET3906E
Código: D
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.43 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 300 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: SOT883L
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CET3906E datasheet
cet3906e.pdf
CET3904E NPN CET3906E PNP www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CET3904E / SILICON TRANSISTORS CET3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in a Tiny Leadless Package TLP , the
cet3904e cet3906e.pdf
CET3904E NPN CET3906E PNP www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CET3904E / SILICON TRANSISTORS CET3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in a Tiny Leadless Package TLP , the
cet3904e.pdf
CET3904E NPN CET3906E PNP www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CET3904E / SILICON TRANSISTORS CET3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in a Tiny Leadless Package TLP , the
Otros transistores... CEN-U45, CEN-U51A, CEN-U55, CEN-U56, CEN-U57, CEN-U60, CEN-U95, CET3904E, TIP142, CH3904GP, CH3904GP-A, CH3904SGP, CH3904TGP, CH3904VGP, CH3904WGP, CH3904ZGP, CH3906GP
History: CEN-U95 | 2SC918
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