CET3906E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CET3906E
Código: D
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.43 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT883L
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CET3906E Datasheet (PDF)
cet3906e.pdf

CET3904E NPNCET3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CET3904E / SILICON TRANSISTORSCET3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in a Tiny Leadless Package TLP, the
cet3904e cet3906e.pdf

CET3904E NPNCET3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CET3904E / SILICON TRANSISTORSCET3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in a Tiny Leadless Package TLP, the
cet3904e.pdf

CET3904E NPNCET3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CET3904E / SILICON TRANSISTORSCET3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in a Tiny Leadless Package TLP, the
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History: EMF18 | MRF857 | MRF911 | HSE302 | UMB6N | SD451 | MJ10011
History: EMF18 | MRF857 | MRF911 | HSE302 | UMB6N | SD451 | MJ10011



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