CMBT3904E Todos los transistores

 

CMBT3904E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CMBT3904E
   Código: B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-923

 Búsqueda de reemplazo de transistor bipolar CMBT3904E

 

CMBT3904E Datasheet (PDF)

 ..1. Size:352K  central
cmbt3904e cmbt3906e.pdf

CMBT3904E CMBT3904E

CMBT3904E NPNCMBT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMBT3904E SILICON TRANSISTORS(NPN) and CMBT3906E (PNP) are general purpose transistors with enhanced specifications. These devices are ideal for applications where ultra small size and power dissipation are the prime requirements. Packaged

 ..2. Size:352K  central
cmbt3904e.pdf

CMBT3904E CMBT3904E

CMBT3904E NPNCMBT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMBT3904E SILICON TRANSISTORS(NPN) and CMBT3906E (PNP) are general purpose transistors with enhanced specifications. These devices are ideal for applications where ultra small size and power dissipation are the prime requirements. Packaged

 7.1. Size:352K  central
cmbt3906e.pdf

CMBT3904E CMBT3904E

CMBT3904E NPNCMBT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMBT3904E SILICON TRANSISTORS(NPN) and CMBT3906E (PNP) are general purpose transistors with enhanced specifications. These devices are ideal for applications where ultra small size and power dissipation are the prime requirements. Packaged

 7.2. Size:243K  cdil
cmbt3903 04.pdf

CMBT3904E CMBT3904E

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT3903CMBT3904SILICON EPITAXIAL TRANSISTORSNPN transistorsMarkingPACKAGE OUTLINE DETAILSCMBT3903 = 1Y ALL DIMENSIONS IN mmCMBT3904 = 1APin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (o

 7.3. Size:158K  cdil
cmbt3905.pdf

CMBT3904E CMBT3904E

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT3905SILICON EPITAXIAL TRANSISTORPNP transistorMarkingPACKAGE OUTLINE DETAILSCMBT3905 = 2YALL DIMENSIONS IN mmPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max.

 7.4. Size:146K  cdil
cmbt3906.pdf

CMBT3904E CMBT3904E

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT3906SILICON EPITAXIAL TRANSISTORPNP transistorMarking PACKAGE OUTLINE DETAILSCMBT3906 = 2A ALL DIMENSIONS IN mmPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCB0 max. 40

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