CMKT2207 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CMKT2207
Código: K70
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 75 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 300 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: SOT-363
Búsqueda de reemplazo de CMKT2207
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CMKT2207 datasheet
cmkt2207.pdf
CMKT2207 www.centralsemi.com SURFACE MOUNT COMPLEMENTARY SILICON DESCRIPTION TRANSISTORS The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individually isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. This ULTRAmini device has been designed for small
cmkt2222a.pdf
CMKT2222A SURFACE MOUNT www.centralsemi.com DUAL NPN SMALL SIGNAL DESCRIPTION SILICON SWITCHING The CENTRAL SEMICONDUCTOR CMKT2222A TRANSISTORS consists of two individually isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. This ULTRAmini device has been designed for small signal general
cmkt2907a.pdf
CMKT2907A CMKT2907AG www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL PNP SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR CMKT2907A and CMKT2907AG each consist of two individual isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. This ULTRAmini device has been designed for small signal gen
Otros transistores... CM45-12A, CM4957, CM5160, CM5583, CM5943, CMBT3904E, CMBT3906E, CMBTA93, 2SC2073, CMKT2222A, CMKT2907A, CMKT3904, CMKT3906, CMKT3920, CMKT5078, CMKT5087, CMKT5088
History: CM4957
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