CMKT2222A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CMKT2222A
Código: K22
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 75 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT-363
Búsqueda de reemplazo de transistor bipolar CMKT2222A
CMKT2222A Datasheet (PDF)
cmkt2222a.pdf
CMKT2222ASURFACE MOUNTwww.centralsemi.comDUAL NPN SMALL SIGNALDESCRIPTION:SILICON SWITCHINGThe CENTRAL SEMICONDUCTOR CMKT2222A TRANSISTORSconsists of two individually isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. This ULTRAmini device has been designed for small signal general
cmkt2207.pdf
CMKT2207www.centralsemi.comSURFACE MOUNTCOMPLEMENTARY SILICONDESCRIPTION:TRANSISTORSThe CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individually isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. This ULTRAmini device has been designed for small
cmkt2907a.pdf
CMKT2907ACMKT2907AGwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL PNP SILICON TRANSISTORSThe CENTRAL SEMICONDUCTOR CMKT2907A and CMKT2907AG each consist of two individual isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. This ULTRAmini device has been designed for small signal gen
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