CMLT3904E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CMLT3904E
Código: L04
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT-563
Búsqueda de reemplazo de transistor bipolar CMLT3904E
CMLT3904E Datasheet (PDF)
cmlt3904e.pdf
CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNPCMLT3946E CMLT3946EG* NPN/PNPwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT SILICONThese CENTRAL SEMICONDUCTOR devices COMPLEMENTARY TRANSISTORSare combinations of dual, enhanced specification transistors in a space saving SOT-563 package, designed for small signal general purpose amplifierand switch
cmlt3906e.pdf
CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNPCMLT3946E CMLT3946EG* NPN/PNPwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT SILICONThese CENTRAL SEMICONDUCTOR devices COMPLEMENTARY TRANSISTORSare combinations of dual, enhanced specification transistors in a space saving SOT-563 package, designed for small signal general purpose amplifierand switch
cmlt3946e.pdf
CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNPCMLT3946E CMLT3946EG* NPN/PNPwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT SILICONThese CENTRAL SEMICONDUCTOR devices COMPLEMENTARY TRANSISTORSare combinations of dual, enhanced specification transistors in a space saving SOT-563 package, designed for small signal general purpose amplifierand switch
cmlt3820g.pdf
CMLT3820Gwww.centralsemi.comSURFACE MOUNT VERY LOW VCE(SAT) DESCRIPTION:The CENTRAL SEMICONDUCTOR CMLT3820G isNPN SILICON TRANSISTORa very low VCE(SAT) NPN Transistor, designed for applications where small size and efficiency are the prime requirements. Packaged in a space saving PICOmini SOT-563 surface mount package, this component provides performance characteristics
cmlt3820.pdf
CMLT3820Gwww.centralsemi.comSURFACE MOUNT SILICONVERY LOW VCE(SAT)DESCRIPTION:The CENTRAL SEMICONDUCTOR CMLT3820G isNPN TRANSISTORa very low VCE(SAT) NPN Transistor, designed for applications where small size and efficiency are the prime requirements. Packaged in a space saving SOT-563 surface mount package, this component provides performance characteristics suitable for
cmlt3474.pdf
CMLT3410 NPNCMLT7410 PNP CMLT3474 NPN/PNPwww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:DUAL, LOW VCE(SAT)These CENTRAL SEMICONDUCTOR dual devices TRANSISTORS are low VCE(SAT) silicon transistors in an SOT-563 surface mount package designed for small signal general purpose amplifier and switching applications requiring low collector emitter saturation voltage.MARKIN
cmlt3410.pdf
CMLT3410 NPNCMLT7410 PNP CMLT3474 NPN/PNPwww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:DUAL, LOW VCE(SAT)These CENTRAL SEMICONDUCTOR dual devices TRANSISTORS are low VCE(SAT) silicon transistors in an SOT-563 surface mount package designed for small signal general purpose amplifier and switching applications requiring low collector emitter saturation voltage.MARKIN
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050