CMLT3906E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CMLT3906E
Código: L06
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT-563
Búsqueda de reemplazo de transistor bipolar CMLT3906E
CMLT3906E Datasheet (PDF)
cmlt3906e.pdf
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cmlt3904e.pdf
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cmlt3946e.pdf
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cmlt3820g.pdf
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cmlt3820.pdf
CMLT3820Gwww.centralsemi.comSURFACE MOUNT SILICONVERY LOW VCE(SAT)DESCRIPTION:The CENTRAL SEMICONDUCTOR CMLT3820G isNPN TRANSISTORa very low VCE(SAT) NPN Transistor, designed for applications where small size and efficiency are the prime requirements. Packaged in a space saving SOT-563 surface mount package, this component provides performance characteristics suitable for
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cmlt3410.pdf
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