D44H11G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: D44H11G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Capacitancia de salida (Cc): 90 pF
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO-220
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D44H11G datasheet
..1. Size:114K onsemi
d44h11g.pdf 
D44H Series (NPN), D45H Series (PNP) Preferred Devices Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such http //onsemi.com as output or driver stages in applications such as switching regulators, converters and power amplifiers. 10 AMP COMPLEMENTARY Features SI
0.1. Size:148K onsemi
mjd44h11g.pdf
MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le
8.1. Size:103K motorola
d44h d45h d45h11 d44h11.pdf
Order this document MOTOROLA by D44H/D SEMICONDUCTOR TECHNICAL DATA NPN D44H Series * Complementary Silicon Power PNP D45H Series * Transistors . . . for general purpose power amplification and switching such as output or driver *Motorola Preferred Device stages in applications such as switching regulators, converters and power amplifiers. Low Collector Emitter Saturation V
8.2. Size:192K motorola
mjd44h11 mjd45h11.pdf
Order this document MOTOROLA by MJD44H11/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD44H11 Complementary Power PNP MJD45H11 * Transistors DPAK For Surface Mount Applications *Motorola Preferred Device . . . for general purpose power and switching such as output or driver stages in SILICON applications such as switching regulators, converters, and power amplifiers. POWER TRANSISTORS
8.3. Size:174K st
d44h11fp d45h11fp.pdf
D44H11FP D45H11FP Complementary power transistors . Features Low collector-emitter saturation voltage Fast switching speed Applications Power amplifier 3 2 1 Switching circuits TO-220FP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagram general purpose linear an
8.4. Size:569K st
mjd44h11t4a mjd45h11t4a.pdf
MJD44H11T4-A MJD45H11T4-A Complementary power transistors . Features The devices are qualified for automotive application TAB2 Low collector-emitter saturation voltage Fast switching speed 3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1 DPAK Applications TO-252 Power amplifier Switching circuits Figure 1. Internal sche
8.5. Size:62K st
d44h8 d44h11.pdf
D44H8 D44H11 NPN SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIER 3 2 DESCRIPTION 1 The D44H8, and D44H11 are silicon multiepitaxial planar NPN transistors mounted in TO-220 Jedec TO-220 plastic package. They are inteded for various swit
8.6. Size:182K st
d44h8 d44h11 d45h8 d45h11.pdf
D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors . Features Low collector-emitter saturation voltage TAB Fast switching speed Applications Power amplifier 3 2 Switching circuits 1 TO-220 Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagram general p
8.7. Size:180K st
d44h8 d44h11 d45h8-d45h11.pdf
D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors . Features Low collector-emitter saturation voltage TAB Fast switching speed Applications Power amplifier 3 2 Switching circuits 1 TO-220 Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagram general p
8.8. Size:210K st
mjd44h11t4-a.pdf
MJD44H11T4-A MJD45H11T4-A Complementary power transistors . Features The devices are qualified for automotive application TAB2 Low collector-emitter saturation voltage Fast switching speed 3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1 DPAK Applications TO-252 Power amplifier Switching circuits Figure 1. Internal sche
8.9. Size:395K st
mjd44h11 mjd45h11.pdf
MJD44H11, MJD45H11 Complementary power transistors Datasheet - production data . Features Low collector-emitter saturation voltage TAB Fast switching speed 2 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 3 1 Applications DPAK TO-252 Power amplifier Switching circuits Description Figure 1. Internal schematic diagram These d
8.10. Size:241K fairchild semi
d44h11.pdf
March 2009 D44H11TU NPN Epitaxial Silicon Transistor Low Collector-Emitter Saturation Voltage VCE(sat) = 1V (Max.) @ 8A Fast Switching Speeds Complement to KSE45H TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector C
8.11. Size:113K fairchild semi
mjd44h11.pdf
March 2009 MJD44H11 NPN Epitaxial Silicon Transistor General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular MJE44H Fast Switching Speeds Low Collector Emitter Saturation V
8.12. Size:550K fairchild semi
d44h8 nzt44h8 d44h11.pdf
February 2010 D44H8 / NZT44H8 / D44H11 NPN Power Amplifier Features This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from process 4Q. C E C B B C E TO-220 SOT-223 D44H8 / D44H11 NZT44H8 Absolute Maximum Ratings* TA=25 C unless otherwise noted Value Symbol Parameter Units D44H8 D44H11 NZT44H8 VCEO Collec
8.13. Size:237K nxp
mjd44h11a.pdf
MJD44H11A 80 V, 8 A NPN high power bipolar transistor 12 September 2019 Product data sheet 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement MJD45H11A 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Ele
8.14. Size:236K nxp
mjd44h11.pdf
MJD44H11 80 V, 8 A NPN high power bipolar transistor 12 September 2019 Product data sheet 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement MJD45H11 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Elect
8.15. Size:148K onsemi
mjd44h11t5g.pdf
MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le
8.16. Size:148K onsemi
mjd44h11t4g.pdf
MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le
8.17. Size:102K onsemi
d44h8 d45h8 d44h11 d45h11.pdf
D44H Series (NPN), D45H Series (PNP) Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as http //onsemi.com output or driver stages in applications such as switching regulators, converters and power amplifiers. 10 AMP COMPLEMENTARY SILICON POWER Features Lo
8.18. Size:148K onsemi
mjd44h11-1g.pdf
MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le
8.19. Size:148K onsemi
mjd44h11rlg.pdf
MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le
8.20. Size:148K onsemi
njvmjd44h11 njvmjd45h11.pdf
MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le
8.21. Size:126K onsemi
mjd44h11 mjd45h11.pdf
MJD44H11 (NPN), MJD45H11 (PNP) Complementary Power Transistors DPAK for Surface Mount Applications http //onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, SILICON and power amplifiers. POWER TRANSISTORS Features 8 AMPERES Lead Formed for Surface Mount Application in Plastic Slee
8.22. Size:298K cystek
d44h11j3.pdf
Spec. No. C606J3-A Issued Date 2005.08.15 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 80V IC 8A D44H11J3 RCESAT 60m Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol Outline D44H11J3 TO-252(DPAK) B Base B C E C
8.23. Size:267K cystek
d44h11fp.pdf
Spec. No. C606FP Issued Date 2005.03.29 CYStech Electronics Corp. Revised Date 2011.12.06 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor D44H11FP Features Low VCE(sat) High BVCEO Excellent current gain characteristics Pb-free lead plating package Symbol Outline D44H11FP TO-220FP B Base C Collector E Emitter B C E Absolut
8.24. Size:137K cystek
d44h11e3.pdf
Spec. No. C606E3-A Issued Date 2005.01.03 CYStech Electronics Corp. Revised Date 2007.11.01 Page No. 1/4 Low Vcesat NPN Epitaxial Planar Transistor D44H11E3 Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol Outline D44H11E3 TO-220AB B Base C Collector E Emitter B C E Absolute Max
8.25. Size:355K cn sptech
d44h11.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistors D44H11 DESCRIPTION Low Collector-Emitter Saturation Voltage V )= 1.0V(Max)@ I = 8A CE(sat C Fast Switching Speeds Complement to Type D45H11 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplification and switching such as
8.26. Size:243K inchange semiconductor
mjd44h11.pdf
isc Silicon NPN Power Transistors MJD44H11 DESCRIPTION Low Collector-Emitter Saturation Voltage V )= 1.0V(Max)@ I = 8A CE(sat C Fast Switching Speeds Complement to Type MJD45H11 DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplification and switchin
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