CHT5551ZGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CHT5551ZGP
Código: ZFN
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT-223
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CHT5551ZGP Datasheet (PDF)
cht5551zgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHT5551ZGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. ( SC-73/SOT-223 )* Suitable for high packing density.1.65+0.156.50+0.200.90+0.052.0+0.33.00+0.10CONSTRUCTION*NPN SIL
cht5551wgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHT5551WGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.2 AmpereAPPLICATION* Telephony and proferssional communction equipment.SC-70/SOT-323FEATURE* Small surface mounting type. (SC-70/SOT-323)* Suitable for high packing density.CONSTRUCTION0.651.30.12.00.20.65* NPN transistors in one package.0.30.11.250.1
cht5551gp.pdf

CHENMKO ENTERPRISE CO.,LTDCHT5551GPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SOT-23FEATURE* Small flat package. ( SOT-23 )* Suitable for high packing density.(1)CONSTRUCTION(3)*NPN SILICON Transistor(2)CONSTRUCTIONFT( ) ( ).055 1.40
cht5551sgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHT5551SGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.2 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-88/SOT-363FEATURE* Small flat package. ( SC-88/SOT-363 )* Suitable for high packing density.(1) (6)CONSTRUCTION0.651.2~1.4 2.0~2.2*NPN SILICON Transistor0.65
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: CHIMH8GP | BFT66S



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