CHEMX1GP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CHEMX1GP
Código: X1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT-563
Búsqueda de reemplazo de transistor bipolar CHEMX1GP
CHEMX1GP Datasheet (PDF)
chemx1gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMX1GPSURFACE MOUNTDual Silicon TransistorVOLTAGE 50 Volts CURRENT 150 mAmpereAPPLICATION* Small Signal Amplifier .FEATURE* Small surface mounting type. (SOT-563)SOT-563* Low saturation voltage VCE(sat)=0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.)* PC= 150mW (Total),120mW per element must not be exceeded.* High saturation current capabilit
chemx18gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMX18GPSURFACE MOUNTDual Silicon TransistorVOLTAGE 15 Volts CURRENT 500 mAmpereAPPLICATION* Small Signal Amplifier .FEATURE* Small surface mounting type. (SOT-563)SOT-563* Low saturation voltage VCE(sat)=0.25V(max.)(IC=200mA) * Low cob. Cob=7.5pF(Typ.)* PC= 150mW (Total),120mW per element must not be exceeded.* High saturation current capabi
chemx3gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMX3GPSURFACE MOUNTDual Silicon TransistorVOLTAGE 50 Volts CURRENT 150 mAmpereAPPLICATION* Small Signal Amplifier .FEATURE* Small surface mounting type. (SOT-563)SOT-563* Low saturation voltage VCE(sat)=0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.)* PC= 150mW (Total),120mW per element must not be exceeded.* High saturation current capabilit
chemx2gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMX2GPSURFACE MOUNTDual Silicon TransistorVOLTAGE 50 Volts CURRENT 150 mAmpereAPPLICATION* Small Signal Amplifier .FEATURE* Small surface mounting type. (SOT-563)SOT-563* Low saturation voltage VCE(sat)=0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.)* PC= 150mW (Total),120mW per element must not be exceeded.* High saturation current capabilit
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: BF233-5
History: BF233-5
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: C4977 | BP4N45S | BP4N38S | BP18N98S | BP15N98T | BM8N08A | BM3P03A | BM1P40A | BM05P06B | BM05P06A | BM05N06B | BM03P05 | BM03N05 | BL15P15A | BL15N15A | BL10P15A | BL10N15A | BA16P25A | BA16N25A | BA15P26B | BA15P26A