DMG204B0 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMG204B0
Código: C4
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 1.5 pF
Ganancia de corriente contínua (hfe): 210
Paquete / Cubierta: SOT-457
Búsqueda de reemplazo de transistor bipolar DMG204B0
DMG204B0 Datasheet (PDF)
dmg204b0.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG204B0Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free
dmg204b1.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG204B1Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free
dmg20402.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG20402Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of se
dmg204a0.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG204A0Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free
dmg20401.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG20401Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For general amplification Package Features Code High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Pin Name Contributes to miniatur
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: DTD143EK | 2SC5698 | 2SB1122R
History: DTD143EK | 2SC5698 | 2SB1122R
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050