EMT18 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMT18
Código: T18
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 260 MHz
Capacitancia de salida (Cc): 6.5 pF
Ganancia de corriente contínua (hFE): 270
Encapsulados: EMT6
Búsqueda de reemplazo de EMT18
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EMT18 datasheet
emt18 umt18n imt18.pdf
General purpose transistors(dual transistors) EMT18 / UMT18N / IMT18 Features Dimensions (Unit mm) 1) Two 2SA2018 chips in a EMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 EMT18 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. Each lead has same dimensions Abbreviated symbol T18 ROHM EMT6 Structure
emt18.pdf
General purpose transistors(dual transistors) EMT18 / UMT18N / IMT18 Features Dimensions (Unit mm) 1) Two 2SA2018 chips in a EMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 EMT18 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. Each lead has same dimensions Abbreviated symbol T18 ROHM EMT6 Structure
chemt18gp.pdf
CHENMKO ENTERPRISE CO.,LTD CHEMT18GP SURFACE MOUNT Dual Silicon Transistor VOLTAGE 12 Volts CURRENT 0.5 Ampere APPLICATION * Small Signal Amplifier . FEATURE * Small surface mounting type. (SOT-563) SOT-563 * Low saturation voltage VCE(sat)=-0.25V(max.)(IC=200mA) * Low cob. Cob=6.5pF(Typ.) * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capabi
Otros transistores... DXTD882, DXTN26070CY, E13005-225, E13005-250, E13005D-213, ECH8502-TL-H, ECH8503-TL-H, EML22, 2SA1837, EMT1DXV6T1G, EMT1DXV6T5G, EMT1FHA, EMT2, EMT2FHA, EMT3, EMT3FHA, L2SA1577QT1G
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