L9014 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L9014 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.45 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 150 MHz
Capacitancia de salida (Cc): 2.2 pF
Ganancia de corriente contínua (hFE): 60
Encapsulados: TO-92
📄📄 Copiar
Búsqueda de reemplazo de L9014
- Selecciónⓘ de transistores por parámetros
L9014 datasheet
..1. Size:127K lrc
l9014.pdf 
LESHAN RADIO COMPANY, LTD. NPN Epitaxial Silicon L9014 Transistor Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to L9015 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 50 V VCEO Collecto
0.1. Size:256K international rectifier
irfl9014pbf.pdf
PD - 95153 IRFL9014PbF HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel D VDSS = -60V l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel RDS(on) = 0.50 l Fast Switching G l Ease of Paralleling l Lead-Free ID = -1.8A S Descripti n Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switchin
0.2. Size:222K international rectifier
irfl9014.pdf
PD - 90863A IRFL9014 HEXFET Power MOSFET Surface Mount Available in Tape & Reel D VDSS = -60V Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel RDS(on) = 0.50 Fast Switching G Ease of Paralleling ID = -1.8A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device
0.3. Size:169K vishay
sihfl9014.pdf
IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Surface Mount RDS(on) ( )VGS = - 10 V 0.50 Available in Tape and Reel Qg (Max.) (nC) 12 Dynamic dV/dt Rating Qgs (nC) 3.8 Repetitive Avalanche Rated P-Channel Qgd (nC) 5.1 Fast Switching Configuration Single
0.4. Size:168K vishay
irfl9014 sihfl9014.pdf
IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Surface Mount RDS(on) ( )VGS = - 10 V 0.50 Available in Tape and Reel Qg (Max.) (nC) 12 Dynamic dV/dt Rating Qgs (nC) 3.8 Repetitive Avalanche Rated P-Channel Qgd (nC) 5.1 Fast Switching Configuration Single
0.5. Size:99K lrc
l9014tlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE Complementary to L9014. L9014QLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9014QLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING IN
0.6. Size:98K lrc
l9014qlt1g l9014rlt1g l9014slt1g l9014tlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9014QLT1G FEATURE Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INF
0.7. Size:105K lrc
l9014qlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE L9014QLT1G Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING IN
0.8. Size:98K lrc
l9014slt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9014QLT1G FEATURE Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INF
0.9. Size:99K lrc
l9014rlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE Complementary to L9014. L9014QLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9014QLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING IN
0.10. Size:98K lrc
l9014qlt1g l9014qlt3g l9014rlt1g l9014rlt3g l9014slt1g l9014slt3g l9014tlt1g l9014tlt3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9014QLT1G FEATURE Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INF
0.11. Size:1520K cn vbsemi
irfl9014trpbf.pdf
IRFL9014TRPBF www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.055 at VGS = - 10 V - 7.0 APPLICATIONS - 60 30 nC 0.065 at VGS = - 4.5 V - 6.0 Load Switch S SOT-223 G D S D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Pa
Otros transistores... L2SC5343RLT1G, L2SC5343SLT1G, L2SC5635LT1G, L2SD1781KQLT1G, L8050HSLT1G, L8550HSLT1G, L9012, L9013, 2N4401, LBC807-16DMT1G, LBC807-25DMT1G, LBC807-40DMT1G, LBC817-16DMT1G, LBC817-16DPMT1G, LBC817-25DMT1G, LBC817-40DMT1G, LBC817-40DPMT1G
