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LBC848AWT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LBC848AWT1G

Código: 1J

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hfe): 110

Empaquetado / Estuche: SOT-323

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LBC848AWT1G Datasheet (PDF)

1.1. lbc848awt1g.pdf Size:394K _upd

LBC848AWT1G
LBC848AWT1G

LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon We declare that the material of product compliance with RoHS requirements. CWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site LBC848AWT1G,BWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( – ) ORDERING INFORMATION Pb Free

3.1. lbc848alt1g.pdf Size:402K _lrc

LBC848AWT1G
LBC848AWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 LBC846ALT1G • ESD Rating – Human Body Model: >4000 V S-LBC846ALT1G ESD Rating – Machine Model: >400 V Series • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chan

 4.1. lbc848clt1g.pdf Size:407K _lrc

LBC848AWT1G
LBC848AWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 LBC846ALT1G • ESD Rating – Human Body Model: >4000 V S-LBC846ALT1G ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements. Series • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang

4.2. lbc848cpdw1t1g.pdf Size:172K _lrc

LBC848AWT1G
LBC848AWT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT–363/SC–88 which is LBC848CPDW1T1G designed for low power surface mount applications. We declare that the material of product comp

 4.3. lbc848cdw1t1g.pdf Size:227K _lrc

LBC848AWT1G
LBC848AWT1G

LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Dual General Purpose Transistors LBC846BDW1T1G LBC847BDW1T1G NPN Duals LBC847CDW1T1G These transistors are designed for general purpose amplifier LBC848BDW1T1G applications. They are housed in the SOT–363/SC–88 which is LBC848CDW1T1G designed for low power surface mount applications. S-LBC846ADW1T1G We declare that the material of produ

4.4. lbc848bwt1g.pdf Size:396K _lrc

LBC848AWT1G
LBC848AWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC846AWT1G,BWT1G NPN Silicon LBC847AWT1G,BWT1G We declare that the material of product compliance with RoHS requirements. CWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC848AWT1G,BWT1G CWT1G ( – ) ORDERING INFORMATION Pb Free

 4.5. lbc848blt1g.pdf Size:402K _lrc

LBC848AWT1G
LBC848AWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 LBC846ALT1G S-LBC846ALT1G • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V Series • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control C

4.6. lbc848bpdw1t1g.pdf Size:173K _lrc

LBC848AWT1G
LBC848AWT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT–363/SC–88 which is LBC848CPDW1T1G designed for low power surface mount applications. We declare that the material of product comp

4.7. lbc848bdw1t1g.pdf Size:226K _lrc

LBC848AWT1G
LBC848AWT1G

LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Dual General Purpose Transistors LBC846BDW1T1G NPN Duals LBC847BDW1T1G LBC847CDW1T1G These transistors are designed for general purpose amplifier LBC848BDW1T1G applications. They are housed in the SOT–363/SC–88 which is LBC848CDW1T1G designed for low power surface mount applications. We declare that the material of product compliance wit

4.8. lbc848cwt1g.pdf Size:396K _lrc

LBC848AWT1G
LBC848AWT1G

LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon We declare that the material of product compliance with RoHS requirements. CWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site LBC848AWT1G,BWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( – ) ORDERING INFORMATION Pb Free

Otros transistores... LBC807-40DMT1G , LBC817-16DMT1G , LBC817-16DPMT1G , LBC817-25DMT1G , LBC817-40DMT1G , LBC817-40DPMT1G , LBC846ADW1T1G , LBC847CPDW1T1G , TIP3055 , LBC858CWT1G , LBCW65ALT1G , M54522WP , M54530FP , M54530P , M54531FP , M54531P , M54531WP .

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