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LBC858CWT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LBC858CWT1G

Código: 3L

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hfe): 420

Empaquetado / Estuche: SOT-323

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LBC858CWT1G Datasheet (PDF)

1.1. lbc858cwt1g.pdf Size:276K _upd

LBC858CWT1G
LBC858CWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT–323/ LBC858AWT1G, BWT1G SC–70 which is designed for low power surface mount applications. CWT1G Features S-LBC856AWT1G, BWT1G We declare that the material of product c

3.1. lbc858cdw1t1g.pdf Size:178K _lrc

LBC858CWT1G
LBC858CWT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is 6 5 designed for low power surface mount applications. 4 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other A

3.2. lbc858clt1g.pdf Size:158K _lrc

LBC858CWT1G
LBC858CWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series PNP Silicon S-LBC857CLT1G • Moisture Sensitivity Level: 1 Series • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements. 3 • S- Prefix for Automotive and Other Applications Requiring Unique Site an

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