PBSS2540MB Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS2540MB

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.59 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: SOT-883B

 Búsqueda de reemplazo de PBSS2540MB

- Selecciónⓘ de transistores por parámetros

 

PBSS2540MB datasheet

 ..1. Size:604K  nxp
pbss2540mb.pdf pdf_icon

PBSS2540MB

PBSS2540MB 40 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 1 4 April 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS3540MB. 1.2 Features and benefits Leadless ultra small SMD plasti

 5.1. Size:81K  nxp
pbss2540m.pdf pdf_icon

PBSS2540MB

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor Product data sheet 2003 Jul 22 NXP Semiconductors Product data sheet 40 V, 0.5 A PBSS2540M NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capabili

 6.1. Size:152K  nxp
pbss2540e.pdf pdf_icon

PBSS2540MB

PBSS2540E 40 V, 500 mA NPN low VCEsat (BISS) transistor Rev. 02 15 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement PBS3540E. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM

 8.1. Size:65K  philips
pbss2515f 1.pdf pdf_icon

PBSS2540MB

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F NPN transistor Product specification 2000 Oct 25 Philips Semiconductors Product specification NPN transistor PBSS2515F FEATURES PINNING Low VCEsat PIN DESCRIPTION High current capabilities. 1 base 2 emitter APPLICATIONS 3 collector Heavy duty battery powered equipment (automotive, telecom and audio video) such as

Otros transistores... RT3A77M, RT3C66M, RT3C77M, RT3CLLM, RT3CRRM, RT3CXXM, PBSM5240PF, PBSM5240PFH, BC557, PBSS3515MB, PBSS3540MB, PBSS4021NX, PBSS4021NZ, PBSS4021PX, PBSS4021PZ, PBSS4021SN, PBSS4021SP