PBSS4021NX Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4021NX

Código: *6D

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2.5 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 115 MHz

Capacitancia de salida (Cc): 85 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-89

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PBSS4021NX datasheet

 ..1. Size:196K  philips
 pbss4021nx.pdf pdf_icon

PBSS4021NX

PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4021PX. 1.2 Features and benefits Very low collector-emitter saturation

 ..2. Size:249K  nxp
 pbss4021nx.pdf pdf_icon

PBSS4021NX

PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor 9 October 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4021PX. 1.2 Features and benefits Very low collector-emitter saturation voltage

 5.1. Size:176K  philips
 pbss4021nt.pdf pdf_icon

PBSS4021NX

PBSS4021NT 20 V, 4.3 A NPN low VCEsat (BISS) transistor Rev. 01 31 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4021PT. 1.2 Features Very low collector-emitter saturation voltage VCEsat High col

 5.2. Size:190K  philips
 pbss4021nz.pdf pdf_icon

PBSS4021NX

PBSS4021NZ 20 V, 8 A NPN low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4021PZ. 1.2 Features and benefits Very low collector-emitter saturation voltage VCE

MOSTRAR MÁS

Otros transistores... RT3CLLM, RT3CRRM, RT3CXXM, PBSM5240PF, PBSM5240PFH, PBSS2540MB, PBSS3515MB, PBSS3540MB, 2N3906, PBSS4021NZ, PBSS4021PX, PBSS4021PZ, PBSS4021SN, PBSS4021SP, PBSS4021SPN, PBSS4032NX, PBSS4032NZ