PBSS4021NX Todos los transistores

 

PBSS4021NX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS4021NX
   Código: *6D
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2.5 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 115 MHz
   Capacitancia de salida (Cc): 85 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-89
 

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PBSS4021NX Datasheet (PDF)

 ..1. Size:196K  philips
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PBSS4021NX

PBSS4021NX20 V, 7 A NPN low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4021PX.1.2 Features and benefits Very low collector-emitter saturation

 ..2. Size:249K  nxp
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PBSS4021NX

PBSS4021NX20 V, 7 A NPN low VCEsat (BISS) transistor9 October 2012 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerand flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNPcomplement: PBSS4021PX.1.2 Features and benefits Very low collector-emitter saturation voltage

 5.1. Size:176K  philips
pbss4021nt.pdf pdf_icon

PBSS4021NX

PBSS4021NT20 V, 4.3 A NPN low VCEsat (BISS) transistorRev. 01 31 January 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4021PT.1.2 Features Very low collector-emitter saturation voltage VCEsat High col

 5.2. Size:190K  philips
pbss4021nz.pdf pdf_icon

PBSS4021NX

PBSS4021NZ20 V, 8 A NPN low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4021PZ.1.2 Features and benefits Very low collector-emitter saturation voltage VCE

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History: GT124B | 2N5285 | 2SA897 | 2SD1389 | EMX1FHA | 2SD1387 | 2N1185

 

 
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