PBSS4041NX Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4041NX

Código: *6F

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2.5 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 6.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 130 MHz

Capacitancia de salida (Cc): 35 pF

Ganancia de corriente contínua (hFE): 75

Encapsulados: SOT-89

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PBSS4041NX datasheet

 ..1. Size:194K  philips
 pbss4041nx.pdf pdf_icon

PBSS4041NX

PBSS4041NX 60 V, 6.2 A NPN low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4041PX. 1.2 Features and benefits Very low collector-emitter saturati

 ..2. Size:247K  nxp
 pbss4041nx.pdf pdf_icon

PBSS4041NX

PBSS4041NX 60 V, 6.2 A NPN low VCEsat (BISS) transistor 10 October 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4041PX. 1.2 Features and benefits Very low collector-emitter saturation volt

 5.1. Size:180K  philips
 pbss4041nt.pdf pdf_icon

PBSS4041NX

PBSS4041NT 60 V, 3.8 A NPN low VCEsat (BISS) transistor Rev. 01 31 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4041PT. 1.2 Features Very low collector-emitter saturation voltage VCEsat High col

 5.2. Size:175K  philips
 pbss4041nz.pdf pdf_icon

PBSS4041NX

PBSS4041NZ 60 V, 7 A NPN low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4041PZ. 1.2 Features and benefits Very low collector-emitter saturation voltage VCE

MOSTRAR MÁS

Otros transistores... PBSS4021SPN, PBSS4032NX, PBSS4032NZ, PBSS4032PX, PBSS4032PZ, PBSS4032SN, PBSS4032SP, PBSS4032SPN, 2SC1815, PBSS4041NZ, PBSS4041PX, PBSS4041PZ, PBSS4041SN, PBSS4041SP, PBSS4041SPN, PBSS4112PAN, PBSS4112PANP