PBSS4041SPN Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4041SPN

Código: 4041SPN

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.7 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5.9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 130 MHz

Capacitancia de salida (Cc): 35 pF

Ganancia de corriente contínua (hFE): 75

Encapsulados: SO-8

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PBSS4041SPN datasheet

 ..1. Size:508K  philips
 pbss4041spn.pdf pdf_icon

PBSS4041SPN

PBSS4041SPN 60 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 20 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP Name PBSS

 ..2. Size:508K  nxp
 pbss4041spn.pdf pdf_icon

PBSS4041SPN

PBSS4041SPN 60 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 20 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP Name PBSS

 4.1. Size:372K  philips
 pbss4041sp.pdf pdf_icon

PBSS4041SPN

PBSS4041SP 60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor Rev. 2 18 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement NXP Name

 4.2. Size:373K  nxp
 pbss4041sp.pdf pdf_icon

PBSS4041SPN

PBSS4041SP 60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor Rev. 2 18 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement NXP Name

MOSTRAR MÁS

Otros transistores... PBSS4032SP, PBSS4032SPN, PBSS4041NX, PBSS4041NZ, PBSS4041PX, PBSS4041PZ, PBSS4041SN, PBSS4041SP, TIP35C, PBSS4112PAN, PBSS4112PANP, PBSS4130PAN, PBSS4130PANP, PBSS4130QA, PBSS4160PAN, PBSS4160PANP, PBSS4160PANPS