PBSS4160PANPS Todos los transistores

 

PBSS4160PANPS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS4160PANPS
   Código: 3G
   Material: Si
   Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.45 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 90 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: SOT-1118D
 

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PBSS4160PANPS Datasheet (PDF)

 ..1. Size:327K  nxp
 pbss4160panps.pdf pdf_icon

PBSS4160PANPS

PBSS4160PANPS60 V, 1 A NPN/NPN low VCEsat (BISS) transistor11 February 2015 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.NPN/NPN complement: PBSS4160PANS. PNP/PNP complement: PBSS5160PAPS.2.

 2.1. Size:359K  nxp
 pbss4160panp.pdf pdf_icon

PBSS4160PANPS

PBSS4160PANP60 V, 1 A NPN/PNP low VCEsat (BISS) transistor14 January 2013 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP.2. Features and benefits Very low collecto

 3.1. Size:280K  nxp
 pbss4160pans.pdf pdf_icon

PBSS4160PANPS

PBSS4160PANS60 V, 1 A NPN/NPN low VCEsat (BISS) transistor11 February 2015 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.NPN/PNP complement: PBSS4160PANPS. PNP/PNP complement: PBSS5160PAPS.2.

 3.2. Size:268K  nxp
 pbss4160pan.pdf pdf_icon

PBSS4160PANPS

PBSS4160PAN60 V, 1 A NPN/NPN low VCEsat (BISS) transistor14 January 2013 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4160PANP. PNP/PNP complement: PBSS5160PAP.2. Features and benefits Very low collecto

MOSTRAR MÁS

Otros transistores... PBSS4041SPN , PBSS4112PAN , PBSS4112PANP , PBSS4130PAN , PBSS4130PANP , PBSS4130QA , PBSS4160PAN , PBSS4160PANP , 2SC2625 , PBSS4160PANS , PBSS4160QA , PBSS4230PAN , PBSS4230PANP , PBSS4230QA , PBSS4240X , PBSS4240Z , PBSS4260PAN .

 

 
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