PBSS4230QA Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4230QA

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 130 MHz

Capacitancia de salida (Cc): 8 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-1215

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PBSS4230QA datasheet

 ..1. Size:244K  nxp
 pbss4230qa.pdf pdf_icon

PBSS4230QA

PBSS4230QA 30 V, 2 A NPN low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PBSS5230QA. 2. Features and benefits Very low collector-emitter

 6.1. Size:251K  philips
 pbss4230t.pdf pdf_icon

PBSS4230QA

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4230T 30 V, 2 A NPN low VCEsat (BISS) transistor Product data sheet 2003 Sep 29 NXP Semiconductors Product data sheet 30 V, 2 A PBSS4230T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICM VC

 6.2. Size:247K  nxp
 pbss4230pan.pdf pdf_icon

PBSS4230QA

PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 14 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4230PANP. PNP/PNP complement PBSS5230PAP. 2. Features and benefits Very low collect

 6.3. Size:338K  nxp
 pbss4230panp.pdf pdf_icon

PBSS4230QA

PBSS4230PANP 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor 14 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4230PAN. PNP/PNP complement PBSS5230PAP. 2. Features and benefits Very low collect

MOSTRAR MÁS

Otros transistores... PBSS4130QA, PBSS4160PAN, PBSS4160PANP, PBSS4160PANPS, PBSS4160PANS, PBSS4160QA, PBSS4230PAN, PBSS4230PANP, C3198, PBSS4240X, PBSS4240Z, PBSS4260PAN, PBSS4260PANP, PBSS4260QA, PBSS4330PAS, PBSS4360Z, PBSS5112PAP