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PBSS4230QA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS4230QA
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 130 MHz
   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-1215
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PBSS4230QA Datasheet (PDF)

 ..1. Size:244K  nxp
pbss4230qa.pdf pdf_icon

PBSS4230QA

PBSS4230QA30 V, 2 A NPN low VCEsat (BISS) transistor23 August 2013 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.PNP complement: PBSS5230QA.2. Features and benefits Very low collector-emitter

 6.1. Size:251K  philips
pbss4230t.pdf pdf_icon

PBSS4230QA

DISCRETE SEMICONDUCTORS DATA SHEETM3D088PBSS4230T30 V, 2 A NPN low VCEsat (BISS) transistorProduct data sheet 2003 Sep 29NXP Semiconductors Product data sheet30 V, 2 A PBSS4230TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICMVC

 6.2. Size:247K  nxp
pbss4230pan.pdf pdf_icon

PBSS4230QA

PBSS4230PAN30 V, 2 A NPN/NPN low VCEsat (BISS) transistor14 December 2012 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4230PANP. PNP/PNP complement: PBSS5230PAP.2. Features and benefits Very low collect

 6.3. Size:338K  nxp
pbss4230panp.pdf pdf_icon

PBSS4230QA

PBSS4230PANP30 V, 2 A NPN/PNP low VCEsat (BISS) transistor14 December 2012 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4230PAN. PNP/PNP complement: PBSS5230PAP.2. Features and benefits Very low collect

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: DMA30401 | P609 | 2SC4959 | CSC2003 | 2CY17 | 2SC505 | 2SC5054O

 

 
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