LMBTA56WT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: LMBTA56WT1G
   Código: 2GM
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 50 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-323

Búsqueda de reemplazo de transistor bipolar LMBTA56WT1G

LMBTA56WT1G Datasheet (PDF)

..1. Size:126K lrc
lmbta56wt1g.pdf

LESHAN RADIO COMPANY, LTD.Driver TransistorsPNP SiliconLMBTA55WT1GLMBTA56WT1GWe declare that the material of productcompliance with RoHS requirements.S-LMBTA55WT1GS- Prefix for Automotive and Other Applications Requiring S-LMBTA56WT1GUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MAXIMUM RATINGSValueRating Symbol LMBTA55 LMBTA56 U

7.1. Size:85K lrc
lmbta55lt1g lmbta56lt1g.pdf

LESHAN RADIO COMPANY, LTD.Driver TransistorsPNP SiliconLMBTA55LT1GWe declare that the material of productLMBTA56LT1Gcompliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring S-LMBTA55LT1GUnique Site and Control Change Requirements; AEC-Q101 S-LMBTA56LT1GQualified and PPAP Capable.MAXIMUM RATINGS3ValueRating Symbol LMBTA55 LMBTA56 Uni

7.2. Size:600K lrc
lmbta56lt1g lmbta56lt3g.pdf

LESHAN RADIO COMPANY, LTD.Driver TransistorsPNP SiliconLMBTA56LT1GFEATURESS-LMBTA56LT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.32) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1011 Qualified and PPAP Capable.2SOT23DEVICE MARKING AND ORDERING

7.3. Size:600K lrc
lmbta56lt1g.pdf