MJ15016G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ15016G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 180 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2.2 MHz
Capacitancia de salida (Cc): 60 pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar MJ15016G
MJ15016G Datasheet (PDF)
2n3055ag mj15015g mj15016g.pdf
2N3055AG (NPN),MJ15015G (NPN),MJ15016G (PNP)Complementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBase complementary transistors are designed for highpower audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orCOMPLEMENTARY SILICONsolenoid drivers, dc-to-dc converters, invert
mj15016g.pdf
2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc
2n3055a mj2955a mj15015 mj15016.pdf
Order this documentMOTOROLAby 2N3055A/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon2N3055AHigh-Power Transistors*MJ15015. . . PowerBase complementary transistors designed for high power audio, steppingmotor and other linear applications. These devices can also be used in powerswitching circuits such as relay or solenoid drivers, dctodc converters, inverters
2n3055a mj15015 mj15016.pdf
2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc
mj15016.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJ15016DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20-70@I = -4A,V = -4VFE C CECollector-Emitter Saturation Voltage-: V )= -1.1 V(Max)@ I = -4ACE(sat CComplement to the NPN MJ15015APPLICATIONSDesigned for high power audio, stepping motor and otherlinear applications, and can als
mj15016.pdf
isc Silicon PNP Power Transistor MJ15016DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20-70@I = -4A,V = -4VFE C CECollector-Emitter Saturation Voltage-: V )= -1.1 V(Max)@ I = -4ACE(sat CComplement to the NPN MJ15015Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, step
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050